Texas Instruments Corporation

Southern Methodist University

Oracle International Corporation

Photodigm Inc.

Rca Inc.

Jerome K Butler

Gary Alan Evans

Jay Bernard Kirk

Ashok V Krishnamoorthy

Xuezhe Zheng

Guoliang Li

Jin Yao

Lily Y Pang

Ruo-Hua He

Dan Botez

Philip A Congdon

Taha Masood

Steven Gregory Patterson

Nuditha Vibhavie Amarasinghe

The present invention includes an optical waveguide with a grating and a method of making the same for increasing the effectiveness of the grating. In one example, the grating is at least partially covered by a liner layer disposed on at least a portion of a grating; and a cover layer disposed on the liner layer, wherein a first material selected for the core and ridges and a second material selected for the liner layer are selected to provide a difference in the index of refraction between the first and second material that is sufficient to provide a contrast therebetween.

Enhanced coupling strength grating having a cover layer

Method of making an enhanced coupling strength grating having a cover layer

A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.

Integrated high speed modulator for grating-outcoupled surface emitting lasers

An array of VCSELs is made to operate coherently by coupling light to and from all elements with a common waveguide. The common waveguide can be fabricated on the wafer or separately, and allows enough optical power to mix between the individual lasers for phase-locking to occur.

High-power coherent arrays of vertical cavity surface-emitting semiconducting lasers

A grating ( ) couples the waveguide region ( ) of a semiconductor laser ( ) to a dielectric waveguide ( ). The waveguide region of the laser includes a mirror ( ) at one end thereof and an absorber ( ) at the other end thereof. The dielectric waveguide includes a reflector ( ) therein to reflect a portion of the light coupled from the laser to the dielectric waveguide back into the laser waveguide region.

Single wavelength semiconductor laser with grating-assisted dielectric waveguide coupler

A grating (,) assisted coupling of a semiconductor waveguide to a dielectric waveguide (,) is provided with one or more reflective stacks (,) to enhance the coupling efficiency. The glass or dielectric core (,) may be efficiently butt-coupled to the core of an optical fiber (,). A laser and semiconductor waveguide, reflective stacks coupling grating, and dielectric waveguide are integrated on a single substrate. Further, multiple lasers (,) with differing lasing frequencies may be integrated and their outputs grating coupled into a single dielectric waveguide (,) for wavelength division multiplexing.

Substrate stack construction for enhanced coupling efficiency of optical couplers

A grating (,) couples the waveguide region (,) of a semiconductor laser (,) to a dielectric waveguide (,). The waveguide region of the laser includes a mirror (,) at one end thereof and an absorber (,) at the other end thereof. The dielectric waveguide includes a reflector (,) therein to reflect a portion of the light coupled from the laser to the dielectric waveguide back into the laser waveguide region.

The invention is an improved semiconductor laser diode which includes a substrate having a pair of substantially parallel grooves in a major surface thereof with a land therebetween, a first confinement layer overlying the major surface of the substrate and the surfaces of the grooves; a guide layer overlying the first confinement layer, an active layer overlying the guide layer and the second confinement layer overlying the active layer. The improvement is a guide layer which tapers in increasing thickness from that portion of the layer over the land and whose surface, contacting the active layer, is concave in shape, and an active layer which is thickest over the land between the grooves and tapers in decreasing thickness in the lateral direction. This structure provides a positive lateral waveguide index for light propagating in the active and guide layers resulting in a reduced threshold current for lasing action and a reduced spontaneous emission near threshold.

Growing community of inventors

Richardson, TX, United States of America

Jerome K Butler