International Business Machines Corporation

North Carolina State University

Other

Ppg Industries Ohio, Inc.

Kyma Technologies, Inc.

Jerome J Cuomo

Louis L Hsu

Rajiv V Joshi

Hormazdyar M Dalal

James M Harper

Harold R Kaufman

Stanley Joseph Whitehair

Charles R Guarnieri

Jerry M Woodall

Richard Joseph Gambino

Praveen Chaudhari

Thomas H DiStefano

C Richard Guarnieri

Dennis S Yee

James L Speidell

Robert Rosenberg

N Mark Williams

Jeffrey A Hopwood

Joseph E Yehoda

Voya Rista Markovich

Paul Alfred Lauro

Jeffrey Donald Gelorme

Jane M Shaw

Stephen Mark Rossnagel

George Frederick Walker

Sung Kwon Kang

David Noel Light

David Andrew Lewis

Douglas Oliver Powell

Robert B Laibowitz

Michael Hatzakis

Anthony P Ingraham

John J Ritsko

Thomas P Gall

Perminder S Bindra

Jaynal Abedin Molla

Jungihl Kim

Andrew David Hanser

George J Saxenmeyer, Jr

Eric P Dibble

Jack A Varcoe

Eric Porter Carlson

Ekkehard F Miersch

Amitava Gangulee

Alec N Broers

Walter W Molzen, Jr

Solomon L Levine

Darin Taze Thomas

Bruce Bumble

Pamela A Leary

Kevin K Chan

Edwin Joseph Selker

Christopher J Berry

Truman F Wilt

James A Claar

Ronnen Andrew Roy

Gary S Selwyn

Joseph S Logan

Joseph Adam Aboaf

James F Ziegler

Joseph D Rutledge

Russell W Dreyfus

Stefan Ufer

Blasius Brezoczky

David A Diehl

Charles Tomasino

John E Heidenreich, Iii

John Cameron Major

Vinay G Sakhrani

Afsaneh Rabiei

Seong I Kim

Randall T Kerth

Hajime Seki

Thomas R McGuire

Matthew F Cali

Han C Wang

Donald J Mikalsen

Joseph M Blum

Paul M Vernon, Jr

Kurt L Haller

Gregory John Clark

David A Smith

Alfred J Landon

William Francis Kane

John Wauchope Matthews

Paul A Maggard

G V Chandrashekhar

Charles K Chiklis

Roger C Sanwald

Brent C Thomas

Srinvasrao A Shivashankar

Joao R Conde

Christopher J Oldham

Bruce A Hoenig

Peter J Yancey

Eugene S Machlin

Michael V Grazioso

Robert J Kobliska

John Kobliska

John D Kupstis

Disclosed herein are aluminum oxide aerogels and methods of making and use thereof. The methods of making the aluminum oxide aerogel include contacting a solid comprising aluminum with a Ga-based liquid alloy to dissolve at least a portion of the aluminum from the solid, thereby forming an aluminum-alloy mixture; and contacting the aluminum-alloy mixture with a fluid comprising water, thereby forming the aluminum oxide aerogel. In some examples, the methods can further comprise capturing and converting carbon dioxide to a syngas comprising carbon monoxide and hydrogen.

Aluminum oxide aerogels and methods of making and use thereof

In a method for capturing carbon, sulfur, and/or nitrogen from a target source, a matrix including activated metal dispersed in a metal activating agent is provided. The target source may be or include a carbon, sulfur, and/or nitrogen target compound. The target source is contacted with the matrix, wherein the activated metal reacts with the target source to produce elemental carbon, elemental sulfur, elemental nitrogen, and/or one or more compounds transformed from the target compound(s). The matrix may be produced by contacting a metal with the metal activating agent, and maintaining contact between the metal and the metal activating agent for a period of time sufficient for metal atoms from the solid metal to disperse in the metal activating agent. The reaction may also produce a metal compound. The activated metal may also be utilized in alkylation and other synthesis processes.

Activated metal low temperature reaction processes and products

The present invention provides a biocompatible coating comprising calcium phosphate that is functionally graded across the thickness of the coating. The coating, which preferably includes hydroxyapatite, is particularly useful for coating implants, such as dental or orthopedic implants. The functionally graded coating is generally crystalline near the interface with the surface of the implant, with crystallinity and crystal diameter decreasing toward the outer layer of the coating. The invention further provides methods for preparing a coated implant comprising a functionally graded calcium phosphate coating thereon.

Functionally graded biocompatible coating and coated implant

The invention provides a method for the at least partial removal of one or more polymeric coating layers from a coated substrate having at least one coated surface. The method includes generating at least one reactive species in an ionized gas stream discharged at atmospheric pressure; and placing the coated surface in the ionized gas stream. The at least one reactive species reacts with the one or more polymeric coating layers such that one or more coating layers is at least partially removed from the coated surface of the substrate at atmospheric pressure.

Methods for removal of polymeric coating layers from coated substrates

A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Non-thermionic sputter material transport device, methods of use, and materials produced thereby

A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal M N layer thereon. The template material is removed, thereby providing a free-standing, single-crystal M N article having a diameter of approximately 0.5 inch or greater and a thickness of approximately 50 microns or greater.

MIIIN based materials and methods and apparatus for producing same

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal M N columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon

A method of forming a laminate structure comprises providing a first substrate and a second substrate each having first and second substrate surfaces respectively, and wherein the surfaces are present in an opposed spaced apart relationship; contacting at least one of the first or second substrate surfaces with a release material such that a portion of the first or second substrate surface is covered with the release material while the remainder of the first or second substrate surface is not covered with the release material; bringing the first and second substrate surfaces of the first and second substrates into contact with each other; and subjecting the substrates to conditions such that the portions of the first and second substrate surfaces not covered with release material become bonded to one another and a laminate structure is formed. The portion of the first or second substrate surface covered with the release material allows the first and second substrates to separate from each other such that an opening is formed therebetween that is substantially coincident with the portion covered with the release material.

Pattern release film between two laminated surfaces

A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.

Wear-resistant polymeric articles and methods of making the same

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH,to WF,during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

Refractory metal capped low resistivity metal conductor lines and vias

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below lmtorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

A composition of matter in the form of an amorphous matrix having cesium dispersed therein is disclosed. The composition is capable of cold cathode emission, thus emitting electrons at wide range of temperatures, including room temperature. The matrix can be formed from amorphous diamond, diamond-like carbon, and other materials as well. Methods of making an amorphous matrix using single and multi-ion beam techniques are also disclosed.

Amorphous matrices having dispersed cesium

A process and apparatus for polishing diamond or carbon nitride. A reaction and polishing take place at the interface between an oxygen superionic conductor (yittria-stabilized zirconia) and the diamond or carbon nitride. Oxygen anions are transported to the interface under the influence of a chemical gradient and react with the diamond or carbon nitride. Other mechanisms, such as an electric field and/or heat, that increase the partial pressure of oxygen on the opposing side of the interface of reaction can be used to accelerate the reaction time. The process may be undertaken at low temperatures and without mechanical motion, making it an attractive and useful polishing method. In addition, there is no residue of the polishing process which needs to be removed and polishing can be accomplished in ambient air.

Method for polishing a diamond or carbon nitride film by reaction with

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Cary, NC, United States of America

Jerome J Cuomo