Novaled Gmbh

Samsung Sdi Co., Inc.

Jerome Ganier

Carsten Rothe

Benjamin Schulze

Francois Cardinali

Vygintas Jankus

Volodymyr Senkovskyy

Steffen Willmann

Domagoj Pavicic

Uwe Gölfert

Tomas Kalisz

Sung-Hyun Jung

Hun Rae Kim

Eun Sun Yu

Byungku Kim

Youngkwon Kim

Hyungsun Kim

Steffen Runge

Regina Luschtinetz

Kay Lederer

Younhwan Kim

Anke Limbach

Anke Teichler

The present invention is directed to an organic light emitting diode () comprising:

Electron transport layer comprising a matrix compound mixture for an organic light-emitting diode (OLED)

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: &#x2014;at least one p-type dopant comprising electron withdrawing groups; &#x2014;at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about &#x2265;1 to about &#x2264;3 nitrile groups and a melting point of about &#x3c;100&#xb0; C., wherein the first auxiliary compound is different from the p-type dopant; and wherein the electron withdrawing groups are fluorine, chlorine, bromine and/or nitrile.

Ink composition for forming an organic layer of a semiconductor

The present invention relates to an organic electroluminescent device comprising an anode, a cathode, an emission layer, an undoped electron transport layer comprising a first matrix compound, and an electron injection layer comprising a second matrix compound and an alkali organic complex and/or alkali halide, wherein the undoped electron transport layer and the electron injection layer are arranged between the emission layer and the cathode, wherein the reduction potential of the first matrix compound is less negative than, the reduction potential of 9,10-di(naphthalen-2-yl)anthracene and more negative than the reduction potential of 4,4'-bis(4,6-diphenyl-1,3,5-triazin-2-yl)biphenyl, wherein the reduction potential in both cases is measured against Fc/Fcin tetrahydrofurane; and the dipole moment of the first matrix compound is selected &#x2265;0 Debye and &#x2264;2.5 Debye and the dipole moment of the second matrix compound is selected &#x3e;2.5 and &#x3c;10 Debye.

Organic electroluminescent device

The present invention relates to an organic electroluminescent device, particularly to an organic light emitting diode (OLED) including an ETL stack of at least two electron transport layers, wherein the first electron transport layer comprises a first electron transport matrix compound and the second electron transport layer comprises second electron transport matrix compound and a redox n-dopant, and a device comprising the OLED.

Organic electroluminescent device comprising a redox-doped electron transport layer and an auxiliary electron transport layer

The present invention relates to a compound of the Formula (I) wherein at least one of Rto Rand/or Aris a group having the Formula (II) wherein the asterisk symbol '*' in Formula (II) represents the position of binding of the group having the Formula (II); L is selected from substituted or unsubstituted Cto Carylene; Aris selected from substituted or unsubstituted Cto Cheteroaryl, wherein the heteroaryl comprises at least two N-atoms; Arand Arare independently selected from substituted or unsubstituted Cto Caryl and/or substituted or unsubstituted Cto Cheteroaryl, wherein Arand Arare selected differently from each other; Aris selected from the group consisting of substituted or unsubstituted Cto Calkyl, substituted or unsubstituted Cto Caryl, substituted or unsubstituted Cto Cheteroaryl and a group having the general Formula (II); Rto Rare independently selected from the group consisting of H, D, F, Cto Calkyl, Cto Caryl, Cto Cheteroaryl and a group having the Formula (II); and Rand R; or Rand Ror R; and R; or Rand Rmay independently from each other form a fused ring or system of fused rings; a semiconducting layer comprising the same, an organic electronic device comprising the same as well as a display or a lighting device comprising the organic electronic device.

Compound and organic semiconducting layer, organic electronic device, display device and lighting device comprising the same

Electronic devices and methods for preparing electronic devices. Electronic devices may include a semiconducting layer, which may include at least one borate complex. Borate complex may include a metal, such as Ca or Sr, and at least one borate ligand. Borate ligands may include a heterocyclic group. Methods may include evaporating a borate complex.

Electronic devices including semiconducting layers comprising at least one borate complex and methods for preparing the same

The present invention relates to acridine compound of formula structure (I), and to an electron transport layer, which comprises at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) as well as to an electronic device comprising a semiconductor layer thereof. 

Acridine compound for use in an electronic device and display device

Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100&#xb0; C. and 600&#xb0; C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

Process for making a metal containing layer

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

N-doped semiconducting material comprising two metal dopants

The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.

Growing community of inventors

Dresden, Germany

Jerome Ganier