Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Ecole Polytechnique

Jerome Damon-Lacoste

Pere Roca I Cabarrocas

Claude Jaussaud

Pierre Jean Ribeyron

A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.

Semiconductor device with heterojunctions and an interdigitated structure

A semiconductor device including, on at least one surface of a crystalline semiconductor substrate, at least one first amorphous semiconductor region doped with a first type of conductivity. The semiconductor substrate includes, on the same at least one surface, at least one second amorphous semiconductor region doped with a second type of conductivity, opposite the first type of conductivity. The first amorphous semiconductor region, insulated for the second amorphous semiconductor region by at least ore dielectric region in the contact with the semiconductor substrate, and the second amorphous semiconductor region form an interdigitated structure.

Growing community of inventors

Antony, France

Jerome Damon-Lacoste