Stmicroelectronics S.a.

Jerome Alieu

Michel Haond

Jean-Pierre Oddou

Christophe Legendre

Marc Vincent

Simon Guillaumet

Hughes Leininger

Christophe Lair

A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production

The device and process include the deposition of polycrystalline germanium in the interconnect spaces between conductive metal elements. The device and process further include the removal of the germanium in order to form air-filled interconnect spaces.

Process for achieving intermetallic and/or intrametallic air isolation in an integrated circuit, and integrated circuit obtained

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L'Isle d'Abeau, France

Jerome Alieu