New York University

The University of Arizona

Jerome Alexandre Bürki

Daniel L Stein

Charles Allen Stafford

A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an 'electromechanical transistor,' is shown to significantly exceed the conductance quantum G0=2e/h.

Growing community of inventors

Pleasant Hill, CA, United States of America

Jerome Alexandre Bürki