Koninklijke Philips Corporation N.v.

Asml Netherlands B.v.

Other

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Ushio Denki Kabushiki Kaisha

Koninklijke Philips Electronics N.v.

Philips Intellectual Property & Standards Gmbh

Jeroen Jonkers

Levinus Pieter Bakker

Vadim Yevgenyevich Banine

Frank Jeroen Pieter Schuurmans

Hugo Matthieu Visser

Willi Neff

Dominik Marcel Vaudrevange

Erik Roelof Loopstra

Klaus Bergmann

Jakob Willi Neff

Ralf Pruemmer

Richard L Sandstrom

Gereon Vogtmeier

Marcel Mathijs Theodore Marie Dierichs

Antonius Johannes Josephus Van Dijsseldonk

Mark Kroon

Michael Cornelis Van Beek

Robertus Adrianus Maria Wolters

Theodorus Hubertus Josephus Bisschops

Christof Metzmacher

Eric Gerardus Theodoor Bosch

Roger Steadman

Guenther Hans Derra

Ralf Dorscheid

Rolf Theo Anton Apetz

Ralf Gordon Conrads

Harald Ernest Verbraak

Adrianus Johannes Henricus Maas

Günther Hans Derra

Joseph Robert Rene Pankert

Felix A Kuepper

Felix Kuepper

Leon Bakker

Hugó Matthieu Visser

Theodorus H J Bisschops

Ralf PRÜMMER

Felix KÜPPER

The present invention relates to a method and device for generating optical radiation (), in particular EUV radiation or soft x-rays, by means of electrically operated discharges. A plasma () is ignited in a gaseous medium between at least two electrodes (), wherein said gaseous medium is produced at least partly from a liquid material (), which is applied to one or several surface(s) moving in the discharge space and is at least partially evaporated by one or several pulsed energy beam(s) (). At least two consecutive pulses () are applied within a time interval of each electrical discharge onto said surface(s). The delay between and/or the pulse energy of said consecutive pulses is controlled to stabilize the position of an emission center of the plasma ().

Method and device for generating optical radiation by means of electrically operated pulsed discharges

The present invention relates to an electrode system, in particular of a gas discharge device for generating EUV radiation and/or soft X-rays. The electrode system comprises at least two electrodes () formed of an electrode material which contains Mo or W or an alloy of Mo or W as a main component. The electrode material has a fine grained structure with fine grains having a mean size of &#x3c;500 nm. With the proposed electrode system, a high thermo-mechanical and thermo-chemical resistance of the electrodes is achieved. The electrode system can therefore be used in known EUV light sources using liquid Sn and being operated at high temperatures.

Electrode system, in particular for gas discharge light sources

It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (). The first connection () comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection () also extending between the front surface and the back surface. The second connection () is spatially separated from the first connection () by at least a portion of the semiconductor substrate (). The front surface is provided with a integrated circuit arrangement () wherein the first connection () is electrically coupled to at least one node of the integrated circuit arrangement () without penetrating the integrated circuit arrangement (). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components () on top of the front surface the substrate () may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.

Low ohmic through substrate interconnection for semiconductor carriers

The present invention relates to a method and device for generating optical radiation, in particular EUV radiation or soft x-rays, by means of an electrically operated discharge. A plasma () is ignited in a gaseous medium between at least two electrodes (), wherein said gaseous medium is produced at least partly from a liquid material () which is applied to one or several surface(s) moving in the discharge space and is at least partially evaporated by one or several pulsed energy beams. In the proposed method and device at least two consecutive pulses () are applied within a time interval of each electrical discharge onto said surface(s). With this measure, the collectable conversion efficiency is increased compared to the use of only one single energy pulse within each electrical discharge.

Method and device for generating EUV radiation or soft X-rays with enhanced efficiency

A method for removing contaminant particles, such as atoms, molecules, clusters, ions, and the like, produced by a radiation source during generation of short-wave radiation having a wavelength of up to approximately 20 nm, includes guiding a first gas between the radiation source and a particle trap arranged in a wall of a chamber. In order to protect an optical device and/or articles to be irradiated against contamination, the method introducing a second gas into the chamber and its pressure is adjusted such that it is at least as high as the pressure of the first gas.

Method and device for removing particles generated by means of a radiation source during generation of short-wave radiation

The present invention relates to a method of increasing the conversion efficiency of an EUV and/or soft X-ray lamp, in which a discharge plasma () emitting EUV radiation or soft X-rays is generated in a gaseous medium formed by an evaporated liquid material in a discharge space, said liquid material being provided on a surface in the discharge space and being at least partially evaporated by an energy beam (). The invention also refers to a corresponding apparatus for producing EUV radiation and/or soft X-rays. In the method, a gas () composed of chemical elements having a lower mass number than chemical elements of the liquid material is supplied through at least one nozzle () in a directed manner to the discharge space and/or to the liquid material on a supply path to the discharge space in order to reduce the density of the evaporated liquid material in the discharge space. With the present method and corresponding apparatus the conversion efficiency of the lamp is increased.

Method of increasing the conversion efficiency of an EUV and/or soft X-ray lamp and a corresponding apparatus

The present invention relates to a plasma discharge lamp for generating EUV radiation and/or soft X-rays by means of an electrically operated discharge. The proposed lamp comprises at least two electrodes arranged in a discharge space at a distance from one another to form a gap which allows the ignition of a plasma () in a gaseous medium between said electrodes. A metal applying device applies a metal to a surface of said electrodes. The electrodes are formed of conveyer belts () driven to transport the metal to said gap, wherein for each of the electrodes a shaper element () is provided at the gap to ensure a proper form and distance of the electrodes at the gap. An energy beam device () is adapted to direct an energy beam onto at least one of said surfaces in the gap evaporating said applied metal at least partially thereby producing said gaseous medium. With the proposed plasma discharge lamp high input powers can be achieved at a compact design of the lamp.

EUV plasma discharge lamp with conveyor belt electrodes

A lithographic projection apparatus includes a reflector assembly, the reflector assembly includes a first and a second reflector extending in a direction of an optical axis, the first and second reflector each having a reflective surface, a backing surface and an entry section at respectively a first and a second distance from the optical axis, the first distance being larger than the second distance, rays deriving from a point on the optical axis being cut off by the entry sections of the first and second reflectors and being reflected on the reflective surface of the first reflector and defining a high radiation intensity zone and a low radiation intensity zone between the reflectors; a radial support member configured to support the reflectors extending in the low radiation intensity zone, wherein the radial support member creates a shade in a downstream direction of the optical axis and a virtual shade in an upstream direction of the optical axis; and a structure placed in the virtual shade.

Lithographic projection apparatus, reflector assembly for use therein, and device manufacturing method

A method and an apparatus generate radiation in the wavelength range from about 1 nm to about 30 nm by an electrically operated discharge, which can be used in lithography or in metrology. A working gas is provided between two electrodes. Plasma is ignited in the working gas to generate radiation which is forwarded via an opening for further use. Debris particles are produced in at least one region of at least one of the electrodes. To retain the debris particles, the region is arranged with respect to the opening in such a way that movement paths of the debris particles run at least predominantly outside an area delimited by the opening.

Method and apparatus for generating radiation in the wavelength range from about 1 nm to about 30 nm, and use in a lithography device or in metrology

A lithographic projection apparatus comprising a radiation system for supplying a projection beam of electromagnetic radiation in the extreme ultraviolet (EUV) range, a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate. A space within the apparatus, which space contains a mirror, is supplied with a hydrocarbon gas which forms a protective cap layer on the mirror surface. The partial pressure of the hydrocarbon gas in the space is controlled in response to variations in the background pressure in the space and/or in the reflectivity of the mirror, such that the thickness of the cap layer on the mirror remains within an acceptable range. The partial pressure of hydrocarbon may be increased in order to sputter away the cap layer and/or, if extra multilayers are provided on the mirror, the top layer(s) of the mirror, thus providing a clean mirror surface. The hydrocarbon used may be an alcohol, in which case the cap layer formed is self-terminating.

Lithographic projection apparatus, device manufacturing method and device manufactured thereby

The invention relates to a method and a device for the generation of a plasma through electric discharge in a discharge space which contains at least two electrodes, at least one of which is constructed from a matrix material or carrier material, such that an erosion-susceptible region with an evaporation spot is formed at least by the current flow. To present a method or a device for the generation of a plasma by electric discharge, it is suggested that a sacrificial substrate () is provided at least at the evaporation spot, the boiling point of said sacrificial suvstrate (38) during discharge operation lying below the melting point of the carrier material (), such that charge carriers arising in the current flow are mainly generated from the sacrificial substrate ().

Method and device for the generation of a plasma through electric discharge in a discharge space

A method of producing extreme ultraviolet radiation (EUV) or soft X-ray radiation by means of an electrically operated discharge, in particular for EUV lithography or for metrology, in which a plasma () is ignited in a gaseous medium between at least two electrodes () in a discharge space (), said plasma emitting said radiation that is to be produced. The gaseous medium is produced from a metal melt (), which is applied to a surface in said discharge space () and at least partially evaporated by an energy beam, in particular by a laser beam ().

Method and apparatus for producing extreme ultraviolet radiation or soft X-ray radiation

The invention relates to a gas discharge lamp for EUV radiation with an anode () and a hollow cathode (), wherein the hollow cathode () has at least two openings (') and the anode () has a through hole (), which is characterized in that the longitudinal axes (&#x2032;) of the hollow cathode openings () have a common point of intersection S lying on the axis of symmetry () of the anode opening ().

Gas discharge lamp for extreme UV radiation

A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes a substrate holder that is constructed to hold a substrate, a projection system that is constructed and arranged to project the patterned beam onto a target portion of the substrate, and a downstream radical source that is connected to a gas supply and is configured to provide a beam of radicals onto a surface to be cleaned.

Lithographic apparatus and device manufacturing method

A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Growing community of inventors

Aachen, Germany

Jeroen Jonkers