Qualcomm Technologies, Inc.

Nxp B.v.

Rf360 Singapore Pte. Ltd.

Rf360 Europe Gmbh

Jeroen Bielen

Kevin Robert Boyle

Klaus Reimann

Maurice Adrianus De Jongh

Stefan Leopold Hatzl

Juergen Portmann

Manuel Hofer

Xavier Perois

Michael Wick

Zidong Liu

Freerk E Van Straten

Markus Valtere

Marcus H Van Kleef

A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.

Multi-level stacked acoustic wave (AW) filter packages and related fabrication methods

Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer. The plurality of heat sink interconnects is located adjacent the high-power die in a horizontal direction.

High-power die heat sink

An RF device includes a substrate and a series circuit of a tunable RF component and a DC blocking capacitor. The series circuit is arranged on the substrate and couples an RF signal terminal to a fixed voltage terminal that is electrically isolated from the RF signal terminal. The tunable RF component is coupled to the RF signal terminal, the DC blocking capacitor is coupled to the fixed voltage terminal and a driver terminal is coupled to the tunable RF component.

RF device and method for tuning an RF device

The power amplifier module comprises a laminate substrate comprising thermal vias and terminals, as well as a platform device with an interconnection substrate of a semiconductor material. This substrate is provided with electrical interconnects at a first side, and having been mounted on the laminate substrate with an opposite second side. Electrically conducting connections extend from the first to the second side through the substrate. A power amplifier device is attached to the second side of the substrate. One of the electrically conducting connection through the interconnection substrate is a grounding path for the power amplifier, while a thermal path is provided by the semiconductor material. There is an optimum thickness for the interconnection substrate, at which both a proper grounding and a acceptable thermal dissipation is effected.

Power amplifier assembly

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Molenhoek, Netherlands

Jeroen Bielen