USA As Represented by Secretary of the Navy

Jeremy T Robinson

Berend T Jonker

Connie H Li

Olaf M J Van 't Erve

Adam L Friedman

Ying Liu

Keith E Whitener

Lian Li

Maxim K Zalalutdinov

Eric S Snow

Jose J Fonseca Vega

Olaf M T Van 't Erve

Rhonda Michele Stroud

Paul E Sheehan

Nabil D Bassim

Woo K Lee

Olaf M J Van't Erve

A crystallographically-oriented metallic film with a two-dimensional crystal layer comprising a substrate, a metal film on the substrate, the two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the two-dimensional crystal layer on the metal film on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.

Crystallographically-oriented metallic films with two-dimensional crystal layers

A method of making a crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising the steps of providing a metal film on a substrate, transferring a two-dimensional crystal layer onto the metal film and forming a two-dimensional crystal layer on metal film complex, heating the two-dimensional crystal layer on metal film complex, and forming a crystallographically-oriented metallic film with a two-dimensional crystal layer. A crystallographically-oriented metallic film with a two-dimensional crystal layer, comprising a substrate, a metal film on the substrate, a two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the porous metal/two-dimensional crystal layer on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.

Method and use for low-temperature epitaxy and film texturing between a two-dimensional crystalline layer and metal film

A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of BiSeand a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material&#x2014;graphene.

Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications

A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of BiSeand applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of BiSeand a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications

A method of transferring functionalized graphene comprising the steps of providing graphene on a first substrate, functionalizing the graphene and forming functionalized graphene on the first substrate, delaminating the functionalized graphene from the first substrate, and applying the functionalized graphene to a second substrate.

Graphene surface functionality transfer

This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material&#x2014;graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making

Spin coating a mixture of graphene oxide platelets, water, and an organic solvent by placing a drop of the mixture on a spinning substrate while blowing a drying gas onto the substrate and allowing the water and the organic solvent on the substrate to evaporate; and repeating the spin coating one or more times to form a graphene oxide film in contact with the substrate. An about 1-100 nm thick film of overlapping platelets of reduced graphene oxide.

Growing community of inventors

Washington, DC, United States of America

Jeremy T Robinson