International Business Machines Corporation

Other

Cray Incorporated

Siemens Aktiengesellschaft

Infineon Technologies Ag

Jeremy K Stephens

Daniel W Storaska

Louis L Hsu

Michael Lester Wise

Huihao Xu

Jeffrey P Gambino

Michael Anthony Sorna

Louis L C Hsu

Karl David Selander

Lawrence Alfred Clevenger

Rajiv V Joshi

John Atkinson Fifield

James Stephen Mason

Karl E Boggs

Matthew B Baecher

Charlie Chornglii Hwang

Larry Clevenger

Mark R Taylor

Thomas J Bardsley

Joseph O Marsh

Suri G Hedge

Raymond J Farbarik

Gerald J Twomey

Jack Allan Mandelman

Carl John Radens

Ramachandra Divakaruni

Toshiaki Kirihata

Ravikumar Ramachandran

Li-Kong Wang

Chandrasekhar Narayan

Richard Anthony Conti

Johnathan E Faltermeier

David M Dobuzinsky

Rama Divakaruni

Larry Alan Nesbit

Hiroyuki Akatsu

Scott David Halle

Michael D Armacost

Wing Kin Luk

William Francis Landers

Chienfan Yu

Munir D Naeem

Joseph Natonio

Maria Ronay

Ciaran J Brennan

Kenneth M Davis

Chenting Lin

Michael L Passow

Michael Maldei

Haruki Nojo

Florian Schnabel

Sumit Pandey

Robert Ploessl

Hibourahima Camara

Robert M Merkling, Jr

Joachim F Nuetzel

One embodiment includes an integrated circuit including an input circuit, a first diode including a first anode and a first cathode, with the first cathode coupled to a first voltage, the first anode coupled to the input circuit at a node via a first mechanical switch, a second diode including a second anode and a second cathode, with the second cathode coupled to the node via a second mechanical switch, the second anode coupled to a ground and a resistor coupled to the input circuit between the integrated circuit and the node, wherein in a first mode of operating, the first mechanical switch and the second mechanical switch are conducting, and in a second mode of operating, the first and second mechanical switches are nonconducting.

Method and apparatus for switched electrostatic discharge protection

In a method for performing equalization of a communication system, a predetermined signal can be transmitted from a transmitter unit to a receiver unit in a downchannel direction on a transmission line, for example as a pair of differential signals which simultaneously transition in opposite directions on respective signal conductors of the transmission line. At the receiver unit, an eye opening of the signal received from the transmission line can be analyzed to determine equalization information. Equalization information can be transmitted from the receiver unit to the transmitter unit in an upchannel direction on the transmission line and be received at the transmitter unit. Using received equalization information, a transmission characteristic of the transmitter unit can be adjusted.

Automatic adaptive equalization method for high-speed serial transmission link

Digital testing of an analog driver circuit is enabled using a circuit including a control circuit for generating signals, a differential driver circuit for receiving a differential input signal, amplifying the differential input signal and transmitting a differential output signal, a programmable termination impedance circuit for generating a differential termination impedance at the output node of the differential driver circuit, and a differential receiver circuit for converting the differential output signal to a single ended signal and transmitting the single ended signal. The testing includes skewing a differential output termination impedance, adjusting a differential receiver circuit voltage offset, selecting a differential driver circuit power level, enabling a decoder which activates only one differential driver circuit segment per test sequence, activating a segment, stimulating the differential driver circuit with digital test patterns, receiving differential driver circuit output, converting the output to a single-ended signal, and observing the single-ended signal.

System and method of digitally testing an analog driver circuit

A circuit of testing an analog driver circuit using digital scan-based test methodologies. The circuit of the present invention includes a control circuit for generating signals in response to a test enable signal, a differential driver circuit for receiving a differential input signal, amplifying the differential input signal and transmitting a differential output signal in response to the differential input signal and the signals generated by the control circuit, a programmable termination impedance circuit for generating a differential termination impedance at the output node of the differential driver circuit in response the signals generated by the control circuit, and a differential receiver circuit for receiving the differential output from the differential driver circuit, convert the differential output signal to a single ended signal and transmitting the single ended signal, all in response to the test enable signal.

System of digitally testing an analog driver circuit

Apparatus and method for counteracting high frequency attenuation of a differential input data signal as the signal is conducted through a data link. A differential input data signal is transmitted from a transmitter to a receiver through a data link. The data eye of the differential input data signal is modified at the transmitter in response to feedback from the receiver where the extent of the data eye of the differential input data signal, after being conducted through the data link, is determined. The feedback to the transmitter, dependent on the determination of the extent of the data eye, controls the data eye at the transmitter and the equalization of the differential input data signal by adapting the differential input data signal to anticipate high frequency attenuation of the differential input data signal in the data link.

Data transceiver and method for equalizing the data eye of a differential input data signal

A data communication system includes a transmitter unit and a receiver unit. The transmission unit has a transmission characteristic that is adjustable in accordance with equalization information. The transmission unit is operable to transmit a predetermined signal and the receiver unit is operable to receive the predetermined signal. The receiver unit is further operable to generate the equalization information by examining the eye opening of the received signal, and to transmit the equalization information to the transmitter unit.

Automatic adaptive equalization method and system for high-speed serial transmission link

A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.

Reduced cap layer erosion for borderless contacts

A self-timed data communication system for a wide data width semiconductor memory system having a plurality of data paths is provided. The data communication system includes a central data path including at least one junction circuit configured for exchanging data signals between the central data path and the plurality of data paths of the at least one data path. A respective one junction circuit of the at least one junction circuit includes circuitry for controlling resetting the respective one junction circuit for preparation of a subsequent data transfer through the respective one junction circuit in accordance with receipt of an input junction monitor signal indicating that data has been transferred to the respective one junction circuit. The data communication system further includes a plurality of data banks configured for storing data, wherein a corresponding data bank of the plurality of data banks is connected to a respective one data path of the plurality of data paths. The data communication system further includes circuitry for controlling the respective one data path in accordance with receipt of a monitor signal indicating that a data transfer operation has been initiated for transfer of data from the respective one data path. The circuitry for controlling includes circuitry for generating a control signal for controlling resetting of the respective one data path after data is transferred for preparation of a subsequent data transfer operation.

Embedded DRAM system having wide data bandwidth and data transfer data protocol

A self-timed data communication system for a wide data width semiconductor memory system having a plurality of data paths. The data communication system includes a plurality of data banks configured for storing data, wherein a corresponding data bank of the plurality of data banks is connected to a respective one data path of the plurality of data paths. The data communication system further includes circuitry for controlling the respective one data path in accordance with receipt of a monitor signal indicating that a data transfer operation has been initiated for transfer of data to or from the respective one data path. The circuitry for controlling includes circuitry for generating a control signal for controlling resetting of the respective one data path after data is transferred for preparation of a subsequent data transfer operation.

A writeback and refresh circuit for a direct sense architecture memory wherein a plurality of primary sense amps are connected to a global data line and also to bitlines, each of which is coupled to an array of memory storage cells which are selected for write and read operations by a plurality of wordlines. A single secondary sense amp receives analog level data from the primary sense amps over the global data line, and includes a restore/writeback circuit which digitizes the data and then returns the digitized data over the global data line to the primary sense amp and back into the memory. A 2-cycle read/writeback operation is used for each memory read cycle, a first cycle read operation, and a second cycle writeback operation. The 2-cycle destructive read architecture eliminates the need for a cache and complex caching algorithms.

Writeback and refresh circuitry for direct sensed DRAM macro

A semiconductor structure includes a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate in a damascene process flow. The semiconductor structure includes a substrate having a dielectric layer followed by the diamond-like carbon layer on a surface thereof. The diamond-like carbon layer is used as a hard-mask for forming conductive metal features from grown substrate material that fills a plurality of openings in the substrate, therein forming a semiconductor island structure, The semiconductor structure has a planar surface at the diamond-like carbon layer and the grown substrate material, whereby the diamond-like carbon polish-stop layer allows for over-planarization of the semiconductor island structure to provide an improved planar surface having a sufficient decrease in topography.

Semiconductor device with diamond-like carbon layer as a polish-stop layer

A data clock system for a semiconductor memory system is provided for performing reliable high-speed data transfers. The semiconductor memory system includes a plurality of data banks configured for storing data, the plurality of data banks in operative communication with a plurality of first data paths, each first data path in operative communication with a second data path. The data clock system includes a first clock path receiving a clock signal during a data transfer operation for transferring data between one data bank of the plurality of data banks and the second data path via one of the plurality of first data paths; and a second clock path receiving the clock signal from the first clock path and propagating the clock signal along therethrough, the second clock path including at least one clock driver. The transfer of data between the one of the plurality of first data paths and the second data path occurs upon receipt of the clock signal by the at least one clock driver. A method for propagating a clock signal in a semiconductor memory system is also provided for performing reliable high-speed data transfers. In the inventive system and method the clock signal is delayed during propagation along the first clock path and the second clock path by approximately the same amount of time regardless if the at least one clock driver is positioned proximate a far end of the second clock path or the at least one clock driver is positioned proximate a near end of the second clock path.

Semiconductor memory system having a data clock system for reliable high-speed data transfers

A single bitline direct sensing architecture employs a 4 transistor sense amplifier circuit located in each memory array, wherein the transistors function to selectively transfer data bits from either a true bitline or a complement bitline of the bitline pair to a data line. The data line is preferably arranged over a plurality of memory arrays. The data line may or may not be shared for the read and write operations. One current source is additionally used to precharge the datalines in a read mode, performing the function of a digital sensing scheme by detecting a resistance ratio between the current source and the transistor driven by the bitline for the corresponding array. A simple inverter may be used for detecting a level of the data line determined by the resistance ratio. The bitline pair is sensed in a single ended fashion, eliminating the need for a cross-coupled pair of CMOS devices, and thus reducing the required layout area. By accessing the bitline pair individually, two sets of control signals for the pre-charge, EQ EQ are developed to allow for bitline shielding in the array.

Single bitline direct sensing architecture for high speed memory device

A direct sensing circuit and method for reading data from a memory cell connected to a bitline, with open bitline sensing without using a reference bitline signal, onto a data line in a data read operation. Prior to the data read operation, both the bitline and the data line are precharged to precharge voltages and a sense node is precharged to ground. A pFET device has its gate coupled to a signal developed on the bitline from the memory cell to detect and amplify the signal level thereof, and has its source coupled to a voltage source and its drain coupled to a sense node, such that the signal developed on the bitline determines the degree of turn-on of the pFET device. An nFET device has its gate coupled to the sense node to detect and amplify the signal level thereof, and has its drain coupled to the data line. When sensing a low data signal, the signal developed on the bitline causes subthreshold voltage leakage current through the pFET device to charge the gate of the nFET device which is floating to amplify the signal developed on the bitline to pull down the precharged data line. When sensing a high data signal, the pFET device and the nFET device remain inactivated, and the data line remains at its precharge high voltage. An nFET writeback device is coupled between the data line and the bitline which is switched on to begin a data writeback into the memory cell when the signal develops on the data line.

DRAM direct sensing scheme

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Ossining, NY, United States of America

Jeremy K Stephens