Cambridge Display Technology Limited

International Business Machines Corporation

Other

Seiko Epson Corporation

Panasonic Corporation

Kabushiki Kaisha Toshiba

Purdue Research Foundation

The British Petroleum Company, P.l.c.

Cambridge Enterprise Limited

Cdt Oxford Limited

Lynxvale Limited

Cambridge Capital Management Limited

Cambridge Research and Innovation Limited

Cambrdige Display Technology Limited

Jeremy H Burroughes

Richard Henry Friend

Julian Charles Carter

Stephen Karl Heeks

Peter Devine

Christopher John Bright

Jonathan J Halls

David John Lacey

Takeo Kaneko

Tomoko Koyama

Tatsuya Shimoda

Donal D Bradley

Alec G Gunner

Gregory Lewis Whiting

Christopher Newsome

Richard J Wilson

Neil Clement Greenham

Ian S Millard

Paul Michael Solomon

Jerry M Woodall

Steven Lorenz Wright

Euan Christopher Smith

Sandip Tiwari

Karl Pichler

Thomas Kugler

Andrew Bruce Holmes

Arne Fleissner

Paul Leslie Burn

Sadayoshi Hotta

Rodney T Hodgson

Paul Berger

Adam R Brown

Michael A Tischler

Mark S Milshtein

Arno Kraft

Peter Ho

Alan C Warren

Michael R Melloch

Colin Baker

Mark Dowling

Surama Malik

Laurence Scullion

David T McInturff

Nobuo Otsuka

Mutsumi Kimura

Carl R Towns

Kenji Okumoto

Mary Joyce McKiernan

Annette Steudel

Clare Foden

Thomas Pounds

Donald Dominic Arnone

Craig Edward Murphy

Tania Zuberi

Nalin K Patel

Philip Charles Allen

Wilhelm Huck

Mark Bale

Zi-Jian Zheng

Mark Garbett

Daniel Tobjörk

Chris Bright

Alan J Harrison

Zijian Zheng

We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Doping organic semiconductors

The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I):  

Compound

This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

Optoelectronic device

An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

Organic semiconductor composition including a non-polymeric material having a polydispersity equal to one, at least one solvent, and a crystallization modifier, and an organic thin-film transistor using the same

A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Method of preparing opto-electronic device

An electronic device comprising: an electronic substrate comprising circuit elements; a double bank well-defining structure disposed over the electronic substrate, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material; and organic semiconductive material disposed in wells defined by the double bank well-defining structure.

Electronic devices and methods of making the same using solution processing techniques

This invention generally relates to planarisation of a surface of a substrate. In an embodiment of planarising a surface region of a substrate, the substrate having a body on a portion of said surface region, the method comprises: modifying the wetability of a surface of said body with respect to a liquid planariser composition by providing a surface modifying layer such as a self-assembled monolayer thereon; and then depositing the liquid planariser composition on said substrate and said body such that the planariser composition wets said surface region, wherein said surface modifying layer determines a contact angle of said liquid planariser composition to said surface of said body such that the deposited liquid planariser composition is repelled from said surface of said body.

Surface planarisation

A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission meansfor emitting light containing wavelength components to be output, and a semi-reflecting layer groupwherein semi-reflecting layersR,G, andB that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions A, A, and Aare determined in association with the wavelengths of light to be output. The configuration is such that, in the light emission regions, the distances L, Land Lbetween a reflecting surface for fight from the light emission means side of the semi-reflecting layersR,G, andB that reflect light output from those light emission regions and a point existing in an interval from the end of the light emitting layer on the semi-reflecting layer group side to the reflecting layer are adjusted so as to have an optical path length at which that light resonates.

Multiple wavelength light emitting device, electronic apparatus, and interference mirror

An organic electroluminescent device having a plurality of pixels, the device comprising: an anode formed on a substrate; an organic electroluminescent layer formed on the anode in each well of a well-defining layer to form the plurality of pixels; a cathode layer on the electroluminescent layer and a layer of metal on the top surface of the well-defining layer; wherein a conductive layer is deposited over the cathode layer and the metal layer to electrically connect the cathode layer on the electroluminescent layer with the metal layer on the top surface of the well-defining layer.

Organic electroluminescent device

A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.

Thin film transistor

An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.

Organic thin film transistors and methods of making the same

The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

Organic thin film transistors and methods of making them

An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.

Organic thin film transistors

An organic electroluminescence element having a cathode as a top electrode, and excelling in luminance efficiency, drive voltage, and operational life is provided. The organic electroluminescence element includes an anode over a substrate and a luminescent layer over the anode. The luminescent layer comprises an organic material. An electron injection layer is over the luminescent layer for injecting electrons into the luminescent layer. The electron injection layer is a metal including at least one of an alkaline metal and an alkaline earth metal. A fullerene layer is over the electron injection layer and includes fullerenes and at least one of an alkaline metal and an alkaline earth metal. The at least one of the alkaline metal and the alkaline earth metal included in the fullerene layer has a lower work function than a lowest unoccupied molecular orbit energy level of the fullerenes. A cathode is over the fullerene layer.

Organic electroluminescence element

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Cambridgeshire, United Kingdom

Jeremy H Burroughes