Micron Technology Incorporated

Intel Corporatino

Jeremy F Adams

Gordon A Haller

Hongbin Zhu

Jun Liu

Swapnil Lengade

Fei Wang

Wei Yeeng Ng

Merri Lyn Carlson

Jeslin J Wu

Jun Zhao

Wesley O McKinsey

Naiming Liu

Carlo Mendoza Orofeo

Daniel Osterberg

Kadir Abdul

Mark A Levan

Zhiqiang Xie

Qinglin Zeng

A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

Microelectronic devices with nitrogen-rich insulative structures

Conductive structure technology is disclosed. In one example, a conductive structure can include an interconnect and a plurality of conductive layers overlying the interconnect. Each conductive layer can be separated from an adjacent conductive layer by an insulative layer. In addition, the conductive structure can include a contact extending through the plurality of conductive layers to the interconnect. The contact can be electrically coupled to the interconnect and insulated from the plurality of conductive layers. Associated systems and methods are also disclosed.

Solid state memory device, and manufacturing method thereof

A semiconductor device includes a semiconductor die comprising integrated circuitry over a substrate of a semiconductor material. A first die ring comprises one or more electrically conductive materials at least partially surrounding the integrated circuitry, the one or more electrically conductive materials comprising an electrically conductive path from proximate a surface of the substrate to an exposed surface of the semiconductor die. A second die ring comprises an electrically conductive material and is disposed around the first die ring. A first electrically conductive interconnect electrically connects the first die ring and to second die ring. Related semiconductor devices and semiconductor dice are disclosed.

Semiconductor devices and semiconductor dice including electrically conductive interconnects between die rings

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Boise, ID, United States of America

Jeremy F Adams