Intel Corporation

Jeremy Alan Streifer

Jagat Shakya

Johanna M Swan

Adel A Elsherbini

Veronica Aleman Strong

Brandon M Rawlings

Brennen Karl Mueller

David M Craig

Shawna M Liff

Ethan Caughey

Shawna M Lift

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.

Sacrificial redistribution layer in microelectronic assemblies having direct bonding

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.

Disclosed herein are apparatuses and methods for mitigating sticking of units-under-test (UUTs). For example, in some embodiments, a probe card may include a probe landing pad, a guide plate having a hole therein, and a pushing mechanism. The pushing mechanism may include a pusher needle and a pusher needle support, the pusher needle support may be between the probe landing pad and the guide plate, and the pusher needle support may be controllable to cause the pusher needle to extend and retract through the hole in the guide plate.

Apparatuses and methods for mitigating sticking of units-under-test

Growing community of inventors

Beaverton, OR, United States of America

Jeremy Alan Streifer