University of Michigan

University of Southern California

Universal Display Corporation

University of Colorado

The United States of America As Represented by the Department of Energy

Alliance for Sustainable Energy, LLC

Trustees of the Colorado School of Mines

Forrest, Stephen R.

Panda, Anurag

Zimmerman, Jeramy D.

Xiao, Xin

Che, Xiaozhou

Lassiter, Brian E.

Bergemann, Kevin

Lee, Kyusang

Jeramy David Zimmerman

Stephen R Forrest

Brian E Lassiter

Kyusang Lee

Xin Xiao

Mark Edward Thompson

Cong Trinh

Kuen-Ting Shiu

Xin Xu

Emily Lowell Warren

Michael S Arnold

Christopher Kyle Renshaw

Andrew N Bartynski

Kevin Bergemann

Anurag Panda

Richard Royal Lunt

Viacheslav V Diev

Kenneth Hanson

Dejiu Fan

Quinn Burlingame

Xiaozhou Che

Matthew T Whited

Eric K Yu

Vlacheslav Diev

Byeongseop Song

Olivia Dean Schneble

Theresa Emily Saenz

Rachel Morneau

Frédéric Sarazin

Martin Ritter

Quentin Diot

David Westerly

Nana Wang

Cong Trihn

A novel treatment method is disclosed, wherein a patch configured to be placed on a patient's skin is activated, before placement, to deliver localized radiotherapy to a diseased area of the skin. The disclosed devices and methods minimize or prevent collateral damage to the neighboring tissues. In most cases, the disclosed devices and methods include coating a contoured, solid, flexible or conformal substrate with one or more lanthanide elements and then activating (e.g. neutron irradiation) the elements such that its resulting radioisotope emits beta-particles into the diseased skin surface when applied to the patient's skin. Novel processes are described for fabricating and irradiating the lanthanide-based skin patch, for example a holmium-based skin patch.

Fabrication and irradiation of a radioactive isotope skin patch

Disclosed herein are organic photosensitive optoelectronic device comprising a first layer comprising one or more of a first layer material, a second layer comprising one or more of a second layer material, and a third layer comprising one or more of a third layer material. The second layer may be dissolved in a semi-orthogonal solvent. The first layer and the third layer may be very slightly soluble or practically insoluble in the semi-orthogonal solvent.

Organic photosensitive devices made using semi-orthogonal solvents and methods of making the same

A method for depositing III-V alloys on substrates and compositions therefrom. A first layer comprises a Group III element. A second layer comprises a silica. A substrate has a surface. The second layer is deposited onto a first layer. The depositing is performed by a sol-gel method. The second layer is exposed to a precursor that comprises a Group V element. At least one of the precursor or the Group V element diffuse through the silica. The first layer is transformed into a solid layer comprising a III-V alloy, wherein at least a portion of the first layer to a liquid. The silica retains the liquified first layer, enabling at least one of the precursor or the Group V element to diffuse into the liquid, resulting in the forming of the III-V alloy.

Methods for depositing III-alloys on substrates and compositions therefrom

Disclosed herein are exciton-blocking treatments for buffer layers used in organic photosensitive optoelectronic devices. More specifically, the organic photosensitive optoelectronic devices described herein include at least one self-assembled monolayer disposed on the surface of an anode buffer layer. Methods of preparing these devices are also disclosed. The present disclosure further relates to methods of forming at least one self-assembled monolayer on a substrate.

Exciton-blocking treatments for buffer layers in organic photovoltaics

Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation; a mixed photoactive layer located between the two electrodes, wherein the mixed photoactive layer comprises at least one donor material having a HOMO energy and at least one acceptor material having a LUMO energy, wherein the at least one donor material and the at least one acceptor material form a mixed donor-acceptor heterojunction; a photoactive layer adjacent to and interfacing with the mixed photoactive layer, wherein the photoactive layer comprises a material having a LUMO energy within 0.3 eV of the LUMO energy of the at least one acceptor material or a HOMO energy within 0.3 eV of the HOMO energy of the at least one donor material; and a buffer layer adjacent to and interfacing with the mixed photoactive layer.

Hybrid planar-mixed heterojunction for organic photovoltaics

The present disclosure relates to a method that includes directing a first precursor that includes a Group III element and a second precursor that includes a Group V element to a chamber containing crystalline silicon, where the crystalline silicon includes a substantially planar surface that is patterned with a plurality of v-grooves and the directing results in the forming of a III-V crystal preferentially on a (111) Si surface of the crystalline silicon.

Methods for depositing III-V compositions on silicon

There is disclosed an organic optoelectronic device comprising two electrodes in superposed relation comprising an anode and a cathode, at least one donor material and at least one acceptor material located between the two electrodes forming a donor-acceptor heterojunction, an anode buffer layer adjacent to the anode and a cathode buffer layer adjacent to the cathode, and an intermediate layer adjacent to at least one of the anode and cathode buffer layers, wherein when the intermediate layer is adjacent to the anode buffer layer, the intermediate layer is chosen to facilitate the transport of holes to the anode buffer layer, and when the intermediate layer is adjacent to the cathode buffer layer, the intermediate layer is chosen to facilitate the transport of electrons to the cathode buffer layer. Also disclosed are methods of making the same.

Organic optoelectronics with electrode buffer layers

Disclosed herein are stable organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material having a sufficiently high glass transition temperature, e.g., higher than the temperature or temperature range at which the device typically operates, higher than a highest operating temperature of the device, higher than a threshold temperature value, etc. and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).

Stable organic photosensitive devices with exciton-blocking charge carrier filters utilizing high glass transition temperature materials

A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes.

Non-planar inorganic optoelectronic devices

The present disclosure generally relates to thin film liftoff processes for use in making devices such as electronic and optoelectronic devices, e.g., photovoltaic devices. The methods described herein use a combination of epitaxial liftoff and spalling techniques to quickly and precisely control the separation of an epilayer from a growth substrate. Provided herein are growth structures having a sacrificial layer positioned between a growth substrate and a sacrificial layer. Exemplary methods of the present disclosure include forming at least one notch in the sacrificial layer and spalling the growth structure by crack propagation at the at least one notch to separate the epilayer from the growth substrate.

Thin film lift-off via combination of epitaxial lift-off and spalling

Disclosed herein are organic photosensitive optoelectronic devices comprising at least one hybrid planar-graded heterojunction. In particular, organic photosensitive optoelectronic devices are disclosed having two electrodes (), () in superposed relation, a graded heterojunction layer () located between the two electrodes, and at least one photoactive layer (), () adjacent to and interfacing with the graded heterojunction layer.

Hybrid planar-graded heterojunction for organic photovoltaics

There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.

Integration of epitaxial lift-off solar cells with mini-parabolic concentrator arrays via printing method

Disclosed herein are organic photosensitive devices including at least one exciton-blocking charge carrier filter. The filters comprise a mixture of at least one wide energy gap material and at least one electron or hole conducting material. As described herein, the novel filters simultaneously block excitons and conduct the desired charge carrier (electrons or holes).

Organic photosensitive devices with exciton-blocking charge carrier filters

Disclosed herein are methods for fabricating an organic photovoltaic device comprising depositing an amorphous organic layer and a crystalline organic layer over a first electrode, wherein the amorphous organic layer and the crystalline organic layer contact one another at an interface; annealing the amorphous organic layer and the crystalline organic layer for a time sufficient to induce at least partial crystallinity in the amorphous organic layer; and depositing a second electrode over the amorphous organic layer and the crystalline organic layer. In the methods and devices herein, the amorphous organic layer may comprise at least one material that undergoes inverse-quasi epitaxial (IQE) alignment to a material of the crystalline organic layer as a result of the annealing.

Use of inverse quasi-epitaxy to modify order during post-deposition processing of organic photovoltaics

There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.

Thermal surface treatment for reuse of wafers after epitaxial lift off

Growing community of inventors

Golden, CO, United States of America

Jeramy David Zimmerman