Macronix International Co., Ltd.

Jer-Hao Hsu

Chung-Kuang Chen

Hsueh-Yi Lee

Yi-Ti Wang

Yi Te Shih

Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.

Method and apparatus for programming nonvolatile memory

A memory and a low offset clamp bias circuit thereof are provided. The low offset clamp bias circuit is adapted for any existing memory and is used for reducing the variation of a drain side voltage Vsupplied to a memory cell in a memory cell array area through the feedback mechanism formed by a clamp bias modulator and a constant voltage generator. Thereby, the accuracy in reading, writing, or erasing data in the memory can be improved.

Memory and low offset clamp bias circuit thereof

A program circuit and method for a flash memory is provided. This invention utilizes a constant current to program the flash memory and modulate the threshold voltage of the flash memory. While a program circuit programming the flash memory, the present invention determines whether the threshold voltage reaches the anticipated value according to the variation of the drain voltage of the flash memory. Hence, the present invention can accurately modulate the threshold voltage of the programmed flash memory and shorten the programming time.

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Hsinchu, Taiwan

Jer-Hao Hsu