Haldor Topsoe A/s

Topsoe A/s

Haldor Topse A/s

Jeppe Rass-Hansen

John Bøgild Hansen

Thomas Heiredal-Clausen

Bengt Peter Gustav Blennow

Tobias Holt Nørby

Tobias Holt Norby

Rainer Kungas

Rainer Küngas

Martin Refslund Nielsen

Poul Georg Moses

Tobias NØRBY

Bengt Peter Blennow

Theis Loye Skafte

Tobias Holt NØRBY

Rainer KÜNGAS

In a method for chromium upgrading of interconnects made of ferritic steel to be used in solid oxide cell stacks, comprising the steps of shaping the interconnect, depositing a coating comprising Cr on at least one surface of the shaped interconnect and performing one or more thermal treatments at a temperature below 1000° C., the resulting Cr concentration near the surface of the interconnect is higher than the Cr concentration in the ferritic steel before shaping. Specifically, the average Cr concentration of the shaped interconnect is increased to 26 wt % Cr or higher.

Method for chromium upgrading of ferritic steel interconnects for solid oxide cell stack applications

A SOC stack has interconnects with a maximum distance between the contact points which are designed to compensate for pressure difference between one side of the interconnect to the other side.

Solid oxide cell stack with a pressure difference between anode and cathode compartments

Improved contact between interconnect and oxygen electrode material is achieved through a contact point between an electrode or a contact layer and a coated ferritic stainless steel interconnect, where the coating on the metallic interconnect comprises Cu.

Contact between interconnect and electrode

Improved contact between interconnect and oxygen electrode material in solid oxide cell (SOC) stacks is achieved through a contact point between the oxygen electrode or an oxygen-side contact layer of the SOC and a coated ferritic stainless steel interconnect in the SOC stack, where the coating on the metallic interconnect comprises Cu.

Contact between interconnect and cell in solid oxide cell stacks

A method for coating an interconnect for a solid oxide cell (SOC) stack comprises providing an interconnect substrate comprising Cr and Fe, coating the interconnect substrate with a first metallic layer by electrodeposition, coating the resulting structure with a second layer of metallic cobalt by electrodeposition and coating the resulting structure with a layer of metallic copper by ion-exchange plating. This way, a metallic copper-cobalt coating is formed on the interconnect.

Deposition of a coating on an interconnect for solid oxide cell stacks

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Copenhagen, Denmark

Jeppe Rass-Hansen