Samsung Electronics Co., Ltd.

California Institute of Technology

Korea Advanced Institute of Science and Technology

Industry-University Cooperation Foundation Hanyang University

Incheon National University Research & Business Foundation

Sungkyunkwan University

Iucf-hyu

Jeongyub Lee

Changseung Lee

Yongsung Kim

Jaekwan Kim

Kiyeon Yang

Eunhyoung Cho

Seunghoon Han

Chanwook Baik

Hongseok Lee

Andrei Faraon

Changgyun Shin

Amir Arbabi

Wooyoung Yang

Wonjae Joo

Kwanghee Lee

Hongkyu Park

Yu Horie

Byonggwon Song

Seokho Song

Sunghee Lee

Woong Ko

Jonghwa Shin

Narae Han

Yongyoung Park

JaeWoong Yoon

Yongwan Jin

Youngsun Choi

Choloong Han

Reehyang Kim

Jangwoo You

Byunghoon Na

Sungchan Kang

Jooho Lee

Seogwoo Hong

Wenxu Xianyu

Sanghoon Song

Changwon Lee

Xianyu Wenxu

Heejeong Jeong

Han-Bo-Ram Lee

Kideok Bae

Daehyuk Son

Yeonhee Kim

Haesung Kim

Changyoul Moon

Heeju Kim

Yunsung Woo

Youngchul Leem

Jongwoo Hong

Hanboram Lee

Chi Thang Nguyen

Geunyoung Yeom

Haesoo Bae

A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer on a side wall of the gap; forming a first precursor layer by adsorbing a first reactant into a bottom of the gap and the side wall of the gap around the bottom of the gap; and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap by adsorbing a second reactant into the first precursor layer. The forming of the first reaction inhibition layer may include adsorbing a first reaction inhibitor into the side wall of the gap; and forming a second reaction inhibitor by removing a specific ligand from the first reaction inhibitor.

Method and apparatus for filling gap using atomic layer deposition

A semiconductor device includes a semiconductor chip including a semiconductor integrated circuit; a cooling channel including a surface of the semiconductor chip and configured to provide a passage for a coolant to cool the semiconductor chip; and a plurality of flexible capillary patterns on the surface of the semiconductor chip inside the cooling channel and configured to move the coolant by capillary action, wherein each capillary pattern of the plurality of flexible capillary patterns may include a first portion in a length direction of the capillary pattern that contacts and is supported by the surface of the semiconductor chip, and a second portion in the length direction that is spaced apart from and unsupported by the surface of the semiconductor chip, and a curvature of the second portion of each capillary pattern of the plurality of flexible capillary patterns changes according to temperature.

Semiconductor device with two-phase cooling structure

A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.

An optical device forms a refractive index distribution for exhibiting a certain phase delay profile with respect to light in a visible light wavelength, and includes a nanopattern layer including a crystalline compound having a refractive index greater than 3 with respect to the light in the visible light wavelength band and a height equal to or less than 2 μm. The nanopattern layer may include the crystalline compound grown according to a selective epitaxial growth method, and accordingly, may have a height beneficial for a manufacturing process. Thus, the efficiency of the optical device may be improved.

Optical device and method of manufacturing the same

An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.

Optical thin film for meta-surface and meta-optical device including the same

An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.

Image sensor including nanostructure color filter

Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.

Multilayer thin-film structure and phase shifting device using the same

Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.

Meta-surface optical element and method of manufacturing the same

A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

Phase shift device including metal-dielectric composite structure

A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

Meta optical devices and methods of manufacturing the same

Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

Nonreciprocal optical transmission device and optical apparatus including the same

Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

Meta-optical device and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Jeongyub Lee