Samsung Electronics Co., Ltd.

Jeongsoon Kong

Sanghoon Baek

Myung Gil Kang

A semiconductor device includes a substrate including an N-stack cell, a buffer cell and an M-stack cell that are on the substrate, the buffer cell being between the N-stack and M-stack cells, an active pattern extending from the N-stack cell to the M-stack cell via the buffer cell, an N-stack channel pattern on the active pattern of the N-stack cell, an M-stack channel pattern on the active pattern of the M-stack cell, a dummy channel pattern on the active pattern of the buffer cell, an N-stack epitaxial pattern between the N-stack channel pattern and the dummy channel pattern, and an M-stack epitaxial pattern between the M-stack channel pattern and the dummy channel pattern. The N-stack channel pattern includes stacked N semiconductor patterns. The M-stack channel pattern includes stacked M semiconductor patterns. Each of N and M is an integer number of 2 or more, and M is greater than N.

Growing community of inventors

Suwon-si, South Korea

Jeongsoon Kong