Samsung Electronics Co., Ltd.

Jeongsoon Kang

Wonsok Lee

Minho Jang

Taehyoung Kim

Donghyun Kim

Hyunmog Park

Changhwa Kim

Masaru Ishii

In Sung Joe

Minsu Lee

Hyoun-Jee Ha

Jongeun Park

Gwideok Ryan Lee

Insung Joe

Mintae Ryu

Seungkuk Kang

Dongseok Cho

Buil Jung

Gyunha Park

The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.

Stacked image sensors

An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

Image sensor wherein the transfer gate contacts a first refractive layer that is coplanar with a second refractive layer

An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

Image sensor

An image sensor includes a substrate having a pixel area in which a plurality of active areas is defined. A first transistor includes a first gate electrode including a buried gate portion. The buried gate portion is buried in the substrate in a first active area selected from the plurality of active areas. A second transistor includes a second gate electrode overlapping the buried gate portion on the first active area in a vertical direction.

Image sensor and electronic system including the same

An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

Semiconductor device

Growing community of inventors

Busan, South Korea

Jeongsoon Kang