Samsung Electronics Co., Ltd.

Jeongkeun Park

Jeongwoo Lee

Kwangwoo Lee

Yeonji Kim

Sangjin Yoo

Byungchan Park

Heejun Oh

An operating method of a memory controller is provided. The method includes: in a first super block including first blocks of memory chips, storing a first read level with respect to a first block in a first memory as first super block read level (RL) information; storing the first read level in a second memory as first chip RL information corresponding to the first memory chip; during the read operation on the first blocks included in the first super block, controlling the read operation based on the first super block RL information stored in the first memory; and based on a failure occurring in data read from the first block of the first memory chip by using the first super block RL information, controlling the read operation on the first block of the first memory chip based on the first chip RL information stored in the second memory.

Memory controller managing read level information, memory system including the same, and operating method of the memory controller

A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

Storage device adjusting history read level storage areas based on reliabilities of memory blocks, storage controller, and operating method of storage controller

Growing community of inventors

Suwon-si, South Korea

Jeongkeun Park