Samsung Electronics Co., Ltd.

Shinhancard Co., Ltd.

Hyundai Card Co., Ltd.

Kb Kookmincard Co., Ltd.

Samsung Card Co., Ltd.

Lotte Card Co., Ltd.

Nonghyup Bank

Jeongjin Lee

Seungyoon Lee

Chan Soo Hwang

Doogyu Lee

Byungsoo Kim

Mooyoung Kim

Youngho Cho

Hae Chul Park

Minseok Kang

Hyelin Lee

Juhyeon Park

Kiwon Kim

Seung Yoon Lee

Sungjun Lee

Hyunchul Hwang

Iljoo Chae

Woo-yong Jung

Seungman Lim

Seungmin Chung

Changyong Um

Chorong Park

Moosong Lee

Changhee Hong

Chan Young Hwang

Jinsun Kim

Hyunjay Kang

A flip-flop (FF) includes a first n-channel metal oxide semiconductor (NMOS) transistor connected to a ground line, a first p-channel metal oxide semiconductor (PMOS) transistor connected to a power voltage line, a second NMOS transistor connecting a first node to the first NMOS transistor, a second PMOS transistor connecting the first node to the first PMOS transistor, a third NMOS transistor and a fourth NMOS transistor, connected to the second NMOS transistor in parallel, and forming a first discharge path for connecting the first node to the ground line, a third PMOS transistor and a fourth PMOS transistor, connected to the second PMOS transistor in parallel, and forming a first charge path for connecting the first node to the power voltage line, a keeper circuit connected to the first node to maintain a voltage level of the first node.

Flip-flop based on clock signal and pulse signal

A method includes forming a first photomask including N mask chip regions and a first mask scribe lane region surrounding each of the N mask chip regions, forming a second photomask including M mask chip regions and a second mask scribe lane region surrounding each of the M mask chip regions, performing a first semiconductor process including a first photolithography process using the first photomask on a semiconductor wafer; and performing a second semiconductor process including a second photolithography process using the second photomask on the semiconductor wafer. The first photolithography process is an extreme ultraviolet (EUV) photolithography process, the first photomask is an EUV photomask, N is a natural number of 2 or more, and M is two times N.

Extreme ultraviolet (EUV) photomask and method of manufacturing semiconductor device using the same

An overlay correcting method capable of optimizing correction of an overlay within a scanner correction limit of a scanner of a scanner system, and a photolithography method, a semiconductor device manufacturing method and the scanner system which are based on the overlay correcting method are provided. The overlay correcting method includes collecting overlay data by measuring an overlay of a pattern; calculating correction parameters of the overlay by performing regularized regression using the overlay data, the regularized regression being based on a correction limit of the scanner such that the correction parameters fall within the correction limit of the scanner; and providing the correction parameters to the scanner.

Overlay correcting method, and photolithography method, semiconductor device manufacturing method and scanner system based on the overlay correcting method

Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.

Overlay correction method, method of evaluating overlay correction operation, and method of fabricating semiconductor device using the overlay correction method

A method of manufacturing a semiconductor device is provided. The method includes transferring an internal shot and an external shot by performing a patterning process on a first wafer, analyzing an overlay of the first wafer, and performing a lithography process on a second wafer, based on the analyzing of the overlay of the first wafer, wherein the analyzing of the overlay of the first wafer includes providing, to the first region, first augmented overlays generated based on an orthogonal coordinate system using first and second directions perpendicular to each other as an axis, and providing, to the second region, second augmented overlays that are overlays in a radial direction from the center of the first wafer.

Method of manufacturing a semiconductor device

An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.

Overlay correction method and semiconductor fabrication method including the same

Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

EUV exposure apparatus, and overlay correction method and semiconductor device fabricating method using the same

A touch input sensing method of an electronic device can comprise the steps of: determining whether a first input device sensed a touch input before a second input device sensed the same; performing a command such that the second input device collects pressure information in a raw data mode, if the first input device sensed the touch input before the second input device sensed the same; allow the second input device to collect the pressure information according to the command; generating a pressure table by using the collected pressure information; and mapping the pressure table and coordinate information sensed by the first input device, so as to transmit the coordinate information and the pressure information to an AP.

Electronic device and touch input sensing method of electronic device

An electronic device for configuring an input interface and a method therefor are provided. The electronic device includes a memory, a display, and at least one processor electrically connected to the memory and the display, wherein the memory includes instructions that, when executed, enable the at least one processor to perform a connection with an external electronic device, transmit information generated in the electronic device to the external electronic device on the basis of the connection so that the generated information is displayed on a display of the external electronic device, and provide an input interface for controlling the information displayed on the external electronic device via the display when the generated information is displayed on the display of the external electronic device.

Method for configuring input interface and electronic device using same

A method of processing touch events and an electronic device adapted to the method are provided. The electronic device includes: a touch screen; a processor electrically connected to the touch screen; a touch control circuit, electrically connected to the touch screen and the processor, the touch control circuit configured to create a touch event in response to a touch input detected on the touch screen; and a memory electrically connected to the processor. The processor is configured to execute at least one application stored in the memory, to determine attribute information of the executed application, to generate touch area information containing an attribute corresponding to at least part of the area of the touch screen and information regarding at least part of the area of the touch screen, based on the attribute information, and to provide the touch area information to the touch control circuit. The touch control circuit determines whether a touch event corresponding to the detected touch input is created, based on the touch area information.

Method of processing touch events and electronic device adapted thereto

Disclosed is a method for controlling a financial chip of a payment device, in which information for multiple cards is stored in a single USIM chip, to enable the payment device to use credit cards from multiple card companies as a payment means. The method includes: dividing storage of the memory of the financial chip into multiple sections and allocating a turn to each storage section; allocating a first turn to the first card company server and recording information on the credit card issued by the first card company server, an application for financial transactions, and an identifier for the application when the first card company server and the second card company server sequentially make a request for the record of credit card information to the financial chip; and providing card arrangement information including information on the first turn and a second turn to the second card company server.

Method for controlling financial chip of payment device

A method for processing a transaction using a dynamic PAN (Primary Account Number), performed by a payment device that provides a card reader with ISO (International Standardization Organization) standards of track 2 information. A PAN area of the track 2 information is divided into a first area, in which a BIN (Bank Information Number) is included, and a second area, in which the BIN is not included. A dynamic area is formed by encrypting the second area and a dynamic PAN area is formed by combining the first area with the dynamic area. Track 2 information (which includes the dynamic PAN area) is provided to the card reader.

Method for processing transaction using dynamic pan

Provided is a payment method using one-time information, which is performed by a payment system network-connected to a relay server and a payment device and having actual card information, the method including: receiving a payment schedule message from the payment device; publishing a Bank Information Number in response to the payment schedule message, generating one-time card information not including the actual card information, and providing the generated one-time card information to the payment device; judging validity of a message for approval request transmitted from the relay server according to whether or not a difference between a first time when the one-time card information is returned through the relay sever and a second time when the one-time card information is provided to the payment device satisfies a predetermined reference time; and determining whether or not the message for approval request is approved according to a judgment result of the validity.

Growing community of inventors

Seoul, South Korea

Jeongjin Lee