Samsung Electronics Co., Ltd.

Jeongil Mun

Jongwoo Sun

Kyeonghun Kim

Hyung Joo Lee

Hyungjoo Lee

Seeyub Yang

Yongseok Lee

Jinyoung Park

Eunhee Jeang

Taekyoon Park

Kyoungsuk Kim

Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.

Semiconductor processing equipment including electrostatic chuck for plasma processing

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same

An etching apparatus includes a reaction chamber having an internal space, a fixing chuck disposed in the reaction chamber, an electrostatic chuck disposed on the fixing chuck and on which a wafer is placed, a focus ring surrounding the electrostatic chuck, and a sensor device configured to be transferred into or out of the reaction chamber and placed on the electrostatic chuck. The sensor device includes a body having a plate shape, and a sensor disposed on an upper surface of the body which senses whether the focus ring is worn.

Sensor device and etching apparatus having the same

A substrate processing module includes a process chamber configured to perform a treatment process on a substrate; a transfer chamber provided on a first side of the process chamber, the substrate being transferred between the process chamber and the transfer chamber; an optical emission spectroscopy (OES) system provided on a second side of the process chamber and configured to monitor the process chamber; and a reference light source disposed in the transfer chamber and configured to emit a reference light to calibrate the OES system.

Substrate processing apparatus, substrate processing module, and semiconductor device fabrication method

An optical emission spectroscopy system may include a reference light source, an analyzer to receive and analyze light transmitted from the reference light source, and a calibrator to calibrate light emitted from the reference light source. The calibrator may change a calibration ratio in accordance with an incidence angle of the light.

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Hwaseong-si, South Korea

Jeongil Mun