Samsung Electronics Co., Ltd.

Jeongil Bang

Jooho Lee

Younggeun Park

Seungwoo Jang

Hyosik Mun

Yongsung Kim

Haeryong Kim

Jeonggyu Song

Kyooho Jung

Junghwa Kim

Myoungho Jeong

A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor

A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

Semiconductor device and method of manufacturing the same

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Suwon-si, South Korea

Jeongil Bang