Samsung Electronics Co., Ltd.

Jeonggyu Song

Jaeho Lee

Cheheung Kim

Jooho Lee

Younsoo Kim

Kyooho Jung

Haeryong Kim

Yongsung Kim

Narae Han

Junghwa Kim

Sunmin Moon

Myoungho Jeong

Hyangsook Lee

Eunha Lee

Eunae Cho

Boeun Park

Younjoung Cho

Jeongil Bang

Seungmin Ryu

Chang-su Woo

Changsu Woo

Bo-Eun Park

Yong-hee Cho

Euae Cho

A capacitor includes: a lower electrode including a metal nitride represented by MM'N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

Method of manufacturing metal nitride film and electronic device including metal nitride film

A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitor

Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.

High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same

Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MO; and a leakage current reducing layer including a metal oxide represented by La'M′′O.

Device with dielectric metal oxide layers and semiconductor apparatus including the same

An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.

Integrated circuit device

A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.

Semiconductor device with capping conductive layer on an electrode and method of fabricating the same

A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.

Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InO-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same

A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped AlOfilm between the top electrode and the dielectric film, wherein the doped AlOfilm includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of AlO.

Capacitor, semiconductor device including the same, and method of fabricating capacitor

An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

Anti-ferroelectric thin-film structure and electronic device including the same

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

Dielectric thin-film structure and electronic device including the same

High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same

A capacitor includes: a lower electrode including a metal nitride represented by MM'N, wherein M is a metal element, M&#x2032; is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM&#x2032;ON, wherein M is a metal element, M&#x2032; is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

Growing community of inventors

Seongnam-si, South Korea

Jeonggyu Song