Samsung Electronics Co., Ltd.

Jeongeon Lee

Cheolwoo Park

HyungSuk Jung

Seokjun Won

Kwangyul Lee

Provided is a semiconductor device and method of fabricating the same. The device includes a substrate including a first region and a second region, a first gate pattern on the first region, a second gate pattern on the second region, and an interlayer insulating layer enclosing the first and second gate patterns. The first gate pattern including a first gate insulating layer and a first gate electrode, the second gate pattern including a second gate insulating layer and a second gate electrode, the first gate insulating layer is thicker than the second gate insulating layer, and a top width of the second gate pattern is larger than a bottom width thereof.

Growing community of inventors

Suwon-si, South Korea

Jeongeon Lee