Seoul National University

Jeong-Yun Sun

Taek Dong Chung

Young-chang Joo

Hae-Ryung Lee

Seung-Min Lim

Seok Hee Han

Younghoon Lee

Hyunjae Yoo

Sungsoo Lim

The present disclosure relates to a triboresistive touch sensor capable of generating electric power by electrification and electrostatic induction, and thus sensing a touch position without a grid.

Triboresistive touch sensor

A method for manufacturing a PDMS device in accordance with an exemplary embodiment of the present invention surface treats the entire surface of a pattern with a thiol group (—SH), so that a hydrogel may be connected to the surface of the pattern by a covalent bond under ultraviolet rays. Therefore, a PDMS device manufactured by the above method has an advantage in that the shape thereof may be stably maintained without the swelling or desorption of a hydrogel even when an electrolyte is filled in a pattern.

Method for manufacturing PDMS device and PDMS device manufactured thereby

Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.

Open-junction ionic transistor

Growing community of inventors

Seoul, South Korea

Jeong-Yun Sun