Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Jeong Yun Lee

Geum Jung Seong

Seung Soo Hong

Young Mook Oh

Seung Ju Park

Seung Hun Lee

Sang Hyun Lee

Namkyu Cho

Jung Hong Joo

Ho Tae Chun

Seung Hyun Han

Jin Won Lee

Seok Hoon Kim

Hyun Ho Jung

Gi Gwan Park

Ki Young Jang

Yong Seok Lee

Hyun Ji Kim

Bo Ra Lim

Chang Han Jun

Sang Duk Park

Kyung Seok Min

In Pil Yoo

Geo Myung Shin

Jeong Min Choi

Bo Soon Kim

Min Hee Choi

Sang Heon Lee

Hyung Joon Kim

Woo Young Lee

Jae Won Lee

Yun Ho Kim

Sang Cheol Shin

Sung Kyu Kim

Jung Hyun Cho

Dong Min Shin

Yong-Ho Jeon

Jin Young Yang

Jin Hwan Jung

Tae Hwan Chung

Dong Seok Lee

Kyung Yub Jeon

Woo Yong Jeon

Vasily Pashkovskiy

Hong Seok Song

Sangcheol Shin

Kee Sang Kwon

Myung Il Kang

Sang Jean Jeon

Myung Ii Kang

Sung Woo Kang

Keun Hee Bai

Ki Youn Jang

Chang Han Jung

Se Min Woo

A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction. The semiconductor device includes a first gate structure on a substrate, the first gate structure extending lengthwise in a first direction to have two long sides and two short sides, relative to each other, and including a first gate spacer; a second gate structure on the substrate, the second gate structure extending lengthwise in the first direction to have two long sides and two short sides, relative to each other, and including a second gate spacer, wherein a first short side of the second gate structure faces a first short side of the first gate structure; and a gate insulating support disposed between the first short side of the first gate structure and the first short side of the second gate structure and extending lengthwise in a second direction different from the first direction, a length of the gate insulating support in the second direction being greater than a width of each of the first gate structure and the second gate structure in the second direction.

Semiconductor device and method for fabricating the same

A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

Semiconductor devices

A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.

Method of manufacturing a semiconductor device

A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

Semiconductor device

A semiconductor device with improved product reliability and a method of fabricating the semiconductor are provided. The semiconductor device includes a substrate, a gate electrode on the substrate, a first spacer on a sidewall of the gate electrode, a conductive contact on a sidewall of the first spacer to protrude beyond a top surface of the gate electrode, a trench defined by the top surface of the gate electrode, a top surface of the first spacer, and sidewalls of the contact, an etching stop layer extending along at least parts of sidewalls of the trench and a bottom surface of the trench, and a capping pattern on the etching stop layer to fill the trench, wherein the capping pattern includes silicon oxide or a low-k material having a lower permittivity than silicon oxide.

Semiconductor device including self-aligned contact and method of fabricating the semiconductor device

A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a field insulating layer on the substrate, the field insulating layer wrapping a side wall of the fin type pattern, a gate electrode on the fin type pattern, the gate electrode extending in a second direction intersecting with the first direction, a first spacer on a side wall of a lower part of the gate electrode, and an etching stop layer extending along a side wall and an upper surface of an upper part of the gate electrode, along a side wall of the first spacer, and along an upper surface of the field insulating layer.

An inverter for driving a motor of a vehicle mediating between a battery and a driving motor is disclosed. The inverter includes a power storage module, a power module, and a cooling module. The power storage module is configured to be supplied with power from the battery. The power module is configured to be supplied with power from the power storage module to transfer the power to the driving motor. The cooling module is configured to be installed between the power storage module and the power module to simultaneously cool the power storage module and the power module.

Inverter for driving motor of vehicle

There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure. The semiconductor device includes a substrate including a first region and a second region, a first wire pattern provided on the first region of the substrate and spaced apart from the substrate, a second wire pattern provided on the second region of the substrate and spaced apart from the substrate, a first gate insulating film surrounding a perimeter of the first wire pattern, a second gate insulating film surrounding a perimeter of the second wire pattern, a first gate electrode provided on the first gate insulating film, intersecting with the first wire pattern, and including a first metal oxide film therein, a second gate electrode provided on the second gate insulating film and intersecting with the second wire pattern, a first gate spacer on a sidewall of the first gate electrode, and a second gate spacer on a sidewall of the second gate electrode.

Semiconductor device and fabricating method thereof

Growing community of inventors

Yongin-si, South Korea

Jeong Yun Lee