Samsung Electronics Co., Ltd.

Jeong Yong Sung

Jee Hoon Han

Hyo Joon Ryu

Hee Suk Kim

A semiconductor memory device includes a mold structure including a plurality of wordlines on a front side of a first substrate, and a string selection line and a stopper line on the plurality of wordlines. A channel structure extends in a vertical direction to penetrate the mold structure. A block separation area extends in a first direction to cut the mold structure. A protective structure is interposed between the block separation area and the stopper line and not between the block separation area and the string selection line and not between the block separation area and the plurality of wordlines. A string separation structure extends in the first direction to cut the string selection line and the stopper line. A bitline extends in a second direction on the mold structure. A bitline contact connects the channel structure and the bitline.

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HWASEONG-SI, South Korea

Jeong Yong Sung