Hynix Semiconductor Inc.

Skhynix Inc.

Soulbrain Sigma-aldrich, Ltd

Jeong-Yeop Lee

Kee-Jeung Lee

Kwan-Woo Do

Jun-Soo Jang

Jae-Min Lee

Young-Dae Kim

Kyung-Woong Park

Sang-Do Lee

Jong-Bum Park

Dong-Su Park

Deok-Sin Kil

Jin-Hyock Kim

Jae-Sung Roh

Hyung-Soon Park

Su-Young Kim

Ji-Won Moon

Dae-Hyun Kim

Young-Bang Lee

Young-Jin Son

Jae-Sun Jung

Sang-Kyung Lee

Chang-Sung Hong

Mi-Hyoung Lee

Hyun-Joon Kim

Ja-Yong Kim

Jin-Ho Shin

A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Semiconductor device and method for fabricating the same

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

Film-forming composition and method for fabricating film by using the same

A method for fabricating a capacitor of a semiconductor device includes sequentially forming an etch-stop layer and a mold layer over a substrate, sequentially forming a support layer and a hard mask pattern over the mold layer, forming a storage node hole by etching the support layer and the mold layer using the hard mask pattern as an etch barrier, forming a barrier layer on the sidewall of the mold layer inside the storage node hole, etching the etch-stop layer under the storage node hole, forming a storage node inside the storage node hole, and removing the hard mask pattern, the mold layer, and the barrier layer.

Method for fabricating capacitor of semiconductor device

An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.

Electrode of semiconductor device and method for fabricating capacitor

In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.

Semiconductor device including carbon-containing electrode and method for fabricating the same

A noble metal layer is formed using ozone (O) as a reaction gas.

Method of forming noble metal layer using ozone reaction gas

A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.

Method of fabricating capacitor

A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.

Semiconductor device and method of fabricating the same

A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuTiOfilm is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuTiOfilm during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.

Method of fabricating capacitor in semiconductor device

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Gyeonggi-do, South Korea

Jeong-Yeop Lee