Electronics and Telecommunications Research Institute

Hyundai Motor Company

Yonsei University

Kia Motors Corporation

Kia Corporation

Jeong Woo Park

Kyung Hyun Park

Gyungock Kim

Sang-Pil Han

Namje Kim

Hyunsung Ko

Han-Cheol Ryu

Yong Soon Baek

Hyun Sung Ko

Kiwon Moon

Jongbum You

Hyun Soo Kim

Hyun Jae Kim

Il Min Lee

Eui Su Lee

Dong Woo Park

Sang Hoon Kim

In Gyoo Kim

Sahnggi Park

Eun Deok Sim

Dongwoo Suh

Do Won Kim

Ki Won Moon

Young Jun Tak

Heesoo Lee

Tae Soo Jung

Jun Hwan Shin

Ho Jin Lee

Tae Moon Roh

Ki Seok Jang

Sang Gi Kim

Dong-Hun Lee

Junghyung Pyo

Sanghoon Kim

Bongki Mheen

Ji Yong Lee

Duk Jun Kim

Tae Sic Park

Sang Pil Han

JiHo Joo

Jae Sik Sim

Kap-Joong Kim

Sahng Gi Park

Ho Joon Lee

Dae Seo Park

Ha Seung Seong

Seong Hyun Lee

Jusung Chung

Dahye Choi

Doo Hyun Yoon

Kyeong Sun Choi

Won-Gi Kim

Nam Je Kim

Wongi Kim

Hee Jin Shin

Han Ho Son

Disclosed is a hybrid electric vehicle comprising an engine configured to generate power by burning a fuel, first and second motor-generators configured to generate power or assist the engine, and a controller. The controller may be configured to set an operation of a first EV mode using the second motor-generator, a second EV mode using the first and second motor-generators, or a series mode of driving the second motor-generator by using power generation of the engine, compare a speed of the vehicle with a reference speed based on that the engine is in an off state, and may be configured to perform a control so that the vehicle drives in the second EV mode when the speed of the vehicle is less than the reference speed.

Hybrid electric vehicle and method for controlling the same

Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.

Semiconductor and method of manufacturing the same

A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.

Apparatus for detecting slurry spread volume using terahertz wave, spread system and detecting method using the same

Provided are a polygon mirror assembly and a scan device. A polygon mirror assembly includes: a polygon mirror including a plurality of reflection surfaces spaced apart from a rotation axis by a predetermined distance; a first motor for rotating the polygon mirror around the rotation axis; a second motor for moving the polygon mirror in a first axial direction such that the rotation axis is tilted while the first motor rotates the polygon mirror; and a clock signal extraction surface for extracting a clock signal for detecting a change in a rotational speed of the first motor.

Polygon mirror assembly and scan device

A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

Schottky barrier diode and method for manufacturing the same

A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Method for manufacturing barrier film with enhanced moisture resistance and barrier film manufactured by the same

Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300&#xb0; C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300&#xb0; C.

Oxide thin film transistor and method of fabricating the same

Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.

Schottky diode having a varied width structure

The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Thin film activation method using electrical energy and thin film transistor fabrication method

The inventive concept relates to a beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module. The beating signal monitoring module includes a nonlinear unit generating an optical signal including a FWM light in response to a beating signal generated from a first light and a second light; a filter unit separating the FWM light from the optical signal and outputting the separated FWM light; and a monitoring unit monitoring the beating signal using the separated FWM light. The beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module can effectively monitor a beating signal being generated by two lasers using a Four Wave Mixing signal.

Beating signal monitoring module, terahertz wave generation device and optical signal monitoring device including the beating signal monitoring module

Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.

Terahertz continuous wave emitting device

A contactless thickness measuring apparatus is provided which includes an terahertz transmitter configured to receive the first optical path signal from the coupler and to generate a terahertz continuous wave using the first optical signal and an applied bias; an optical delay line configured to delay the second optical path signal output from the coupler; and an terahertz receiver configured to receive the terahertz continuous wave penetrating a sample and to detect an optical current using the terahertz continuous wave and the second optical path signal delayed. A thickness of the sample is a value corresponding to the optical current which phase value becomes a constant regardless of a plurality of measurement frequencies.

Apparatus and method for contactless thickness measurement

Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.

Apparatus for generating/detecting terahertz wave using graphene and manufacturing method of the same

A terahertz wave generating module includes a bidirectional light source which provides a first dual-mode beam in a first direction and a second dual-mode beam in a second direction; a forward lens unit which focuses the first dual-mode beam; a photomixer unit which converts the first dual-mode beam focused by the forward lens unit into a terahertz wave; a backward lens unit which focuses the second dual-mode beam; and a light output unit which uses the second dual-mode beam focused by the backward lens unit as a light signal, wherein the bidirectional light source, the forward lens unit, the photomixer unit, the backward lens unit, and the light output unit are integrated in a housing.

Terahertz wave generating module and terahertz wave detecting device including the same

An optical device may include first and second lasers generating first and second laser beams; and a photo detector detecting the first and second laser beams. The optical detector comprises a substrate, a first impurity layer on the substrate, an absorption layer on the first impurity layer and a second impurity layer on the absorption layer. The absorption layer generates a terahertz by a beating of the first and second laser beams and has a thickness of less than 0.2 &#x3bc;m.

Photo detector and optical device

Growing community of inventors

Daejeon, South Korea

Jeong Woo Park