Samsung Display Co., Ltd.

Jeong-Won Kim

Jin-Ho Ju

Chul-Won Park

Jun-Hyuk Woo

Kwang-Woo Park

Min Hyuck Kang

Dong-Min Kim

Tae-Gyun Kim

Ki-Hyun Cho

Bong-Yeon Kim

Hyun-Joo Lee

Seung-Bo Shim

Eun Jeagal

Gwui-Hyun Park

Dong-Eon Lee

Jong-kwang Lee

Won-Young Lee

Joo-Kyoung Park

A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.

Photo mask and method of manufacturing the same

According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.

Photo mask and method of manufacturing thin film transistor using the same

A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent.  R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.

Photoresist composition and method of manufacturing thin film transistor substrate using the same

In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.

Display substrate having a thin film transistor and method of manufacturing the same

A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Mask having assist pattern

A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Photoresist composition and method of forming a metal pattern using the same

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Seoul, South Korea

Jeong-Won Kim