Hrl Laboratories, LLC

USA As Represented by Secretary of the Navy

California Institute of Technology

Url Laboratories, LLC

Jeong-sun Moon

Kyung-Ah Son

Hwa Chang Seo

Ryan G Quarfoth

Richard Michael Kremer

James H Schaffner

Hyok Jae Song

Jongchan Kang

Kangmu Lee

Tahir Hussain

Zhiwei A Xu

Brian N Limketkai

Daniel M Zehnder

Jack A Crowell

Mariano J Taboada

Joshua M Doria

Terry B Welch

Baohua Yang

Danny Wong

Keyvan R Sayyah

David H Chow

Hasan Sharifi

Joseph S Colburn

Pamela R Patterson

Andrea Corrion

David F Brown

Adour Vahe Kabakian

Keerti S Kona

Wah S Wong

Ara K Kurdoghlian

Joel C Wong

Keh-Chung Wang

Adam J Williams

Yan Tang

Grant Andrew Ellis

Alan E Reamon

Steven S Bui

Nicholas Prokopuk

Fevzi Arkun

Hwa-Chang Seo

A device having: a multilayer composite phase change material structure with: a bottom PCM layer of a first SbTe PCM material having a first metallic doping; a first composite PCM layer on the bottom PCM layer, wherein the first composite PCM layer comprises at least: a first composite layer, comprising said first PCM material having a second metallic doping; and a second composite layer, comprising said first SbTe PCM material undoped, on the first composite layer; and a top PCM layer, comprising first SbTe PCM material having said first metallic doping, on the composite PCM layer. The first metallic doping can be identical to the second metallic doping. The first PCM material can comprise SbTe and the first and second metallic dopings can comprise one of Ge, In and GeIn.

Reconfigurable devices with multi-layer composite phase change materials

A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (≥450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.). If an anneal is applied in a hydrogen environment that will cause hydrogenation of the PCMO film which yields PCMO films with an extremely small optical loss (i.e., optical extinction coefficient k<0.001) over the entire IR range.

Method for growing crystalline optical films on Si substrates which may optionally have an extremely small optical loss in the infra-red spectrum with hydrogenation of the crystalline optical films

An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.

Electric field-tunable IR devices with very large modulation of refractive index and methods to fabricate them

A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

Solid-state tip-tilt-phased array

A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.

Spatial light modulator using phase-change materials with improved fill factor

A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (&#x2265;450&#xb0; C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (&#x3c;50&#xb0; C.). If an anneal is applied in a hydrogen environment that will cause hydrogenation of the PCMO film which yields PCMO films with an extremely small optical loss (i.e., optical extinction coefficient k&#x3c;0.001) over the entire IR range.

A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

Graphene LHFETS (lateral heterostructure field effect transistors) on SI compatible with CMOS BEOL process

A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.

Solid state electrically variable-focal length lens

A HEMT comprising: a substrate; a channel layer coupled to the substrate; a source electrode coupled to the channel layer; a drain electrode coupled to the channel layer; and a gate electrode coupled to the channel layer between the source electrode and the drain electrode; wherein the channel layer comprises: at least a first GaN layer; and a first graded AlGaN layer on the first GaN layer, the Al proportion of the first graded AlGaN layer increasing with the distance from the first GaN layer.

Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications

A spatial light modulator cell and arrays of spatial light modulator cells are disclosed. The spatial light modulator cells can comprise a phase change material (PCM) having a first side and a second side; an optical reflector configured to reflect an optical beam passing from the first side to the second side; and a PCM heater thermal conductively coupled to the PCM, wherein thermal modulation of the PCM modulates a phase of the PCM which varies light transmission through the PCM. Methods of making spatial light modulator cells and arrays are also disclosed.

Electrically switchable infrared mirrors using phase-change chalcogenides materials

A vertical directional coupler or switch comprising a lower and an upper waveguide, integrated with an optical phase change material disposed between the lower and upper waveguides to control a directional of optical coupling between the lower and upper waveguides.

Electrically-controllable 3D optical waveguide switch with phase change materials

A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.

Metal oxide semiconductor field effect transistor and method of manufacturing same

A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.

Spatial light modulator using phase-change matertals with improved fill factor

An optical apparatus may comprise: an electrically reconfigurable optical layer comprising at least one phase-change material, wherein an optical property of the phase-change material is reconfigurable by an electric field; an optically transparent top electrode and a bottom electrode, the top and bottom electrodes configured to apply the electric field to the electrically reconfigurable optical layer, wherein the electrically reconfigurable optical layer is disposed between the optically transparent top electrode and the bottom electrode; and a colossal-K dielectric layer disposed between the electrically reconfigurable optical layer and the bottom electrode. The phase-change material of the electrically reconfigurable optical layer may comprise phase-change nickelate or tungsten oxide. The phase-change material of the electrically reconfigurable optical layer may have a perovskite structure. The phase-change nickelate or tungsten oxide may enable to actuate large refractive index changes of more than 1 in infrared wavelength spectrums at high speeds of phase reconfiguration of more than 1 kHz by applying the electric field to the phase-change material.

Electrically reconfigurable optical apparatus using electric field

A method for time interleaved writing includes providing a phase change material (PCM) array, the PCM array comprising a plurality of phase change material areas arranged in a two dimensional array having rows and columns, selecting PCM areas to configure, and configuring the selected PCM areas. Selecting PCM areas to configure includes selecting PCM areas to configure in both the row and column dimensions that are separated by at least two PCM areas that are not selected to be configured.

Growing community of inventors

Moorpark, CA, United States of America

Jeong-sun Moon