Samsung Electronics Co., Ltd.

Jeong Soon Kang

Kyung Hwan Lee

Woo Bin Song

Hyun Cheol Kim

Sang Jo Kim

Hyun Woo Ji

Jun Su Kim

Beom Sik Kim

Moon Joon Kim

An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.

Image sensor, image sensing system, and image sensing method

Provided is an imaging device for mobile devices such as a mobile phone, using a high resolution image sensor such as a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS).

Imaging device

Growing community of inventors

Gyeongsangbuk-do, South Korea

Jeong Soon Kang