Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Dada Corporation

Jeong Sik Lee

Yong Tae Moon

Dae Seob Han

Jung Hun Jang

Jong Hak Won

Jeong Soon Yim

Seung Keun Nam

Keun Uk Park

Yong Gyeong Lee

Yong Seon Song

Ho Ki Kwon

Byeoung Jo Kim

Joong Seo Park

Yeo Jae Yoon

Seoung Hwan Park

Sang Heon Han

Su Jung Yoon

An embodiment relates to a surface emitting laser device and a light emitting device including the same. A surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an aperture area disposed on the active layer and including an aperture and an insulating region; and a second reflective layer disposed in the aperture area. The active layer may comprise a plurality of quantum wells, quantum barriers, and intermediate layers disposed between the quantum wells and the quantum barriers. The quantum wells and the quantum barriers may include a ternary material, and the intermediate layers may comprise a binary material.

Surface emitting laser device and light emitting device including the same

The embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively. In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.

Surface emitting laser device and a light emitting device including the same

A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.

Surface-emitting laser device and light emitting device including the same

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.

Light emitting device and light emitting device package including the same

Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an AlInGaN layer (0&#x3c;x&#x2266;1 and 0&#x3c;y&#x2266;1) on the first conductive semiconductor layer, an active layer on the AlInGaN layer, and a second conductive semiconductor layer on the active layer.

Light emitting device

The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

Light emitting device and light emitting device package

Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer.

Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at least two superlattice structures adjacent to the first conductivity-type semiconductor layer, an active layer adjacent to the interfacial layer, and a second conductivity-type semiconductor layer adjacent to the active layer. The first conductivity-type semiconductor layer, interfacial layer, active layer, and second conductivity-type semiconductor layer are stacked in a same direction, the first and second semiconductor layer are of different conductivity types, an energy band gap of the superlattice structure adjacent to the active layer is smaller than an energy band gap of the superlattice structure adjacent to the first conductivity-type semiconductor layer.

Light emitting device and lighting system having the same

A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Light emitting device, light emitting device package, and lighting system including the same

A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.

Light emitting diode, light emitting device package including the same and lighting system

Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids.

Growth substrate and light emitting device

Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including &#x3b2;-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.

Light emitting device and method of manufacturing the same

A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.

Growing community of inventors

Seoul, South Korea

Jeong Sik Lee