Dongjin Semichem Co., Ltd.

Samsung Electronics Co., Ltd.

Jeong-sik Kim

Jae-Hyun Kim

Hyun-Jin Kim

Jae-Woo Lee

Hyo-Jung Roh

Sang-Jeoung Kim

Jong-Kyoung Park

Jung-Youl Lee

Dong-Hun Lee

Deog-Bae Kim

Eu-Jean Jang

Min-Ja Yoo

Jun-Gyeong Lee

Young-Bae Lim

Provided is an X-ray detector including: a data transceiver configured to wirelessly receive identification (ID) information relating to a central controller from the central controller when the X-ray detector is in a sharing mode in which the X-ray detector exchanges certain data with the central controller; and a processor configured to perform a configuration based on the received ID information.

X-ray detector and method of configuring the same

A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (&#x2014;CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (&#x2014;NH&#x2014;), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.

Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same

Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (E) of the photoresist layer without an exposure mask, and then developing the same.

Method for forming fine pattern in semiconductor device

A polymer which has siloxane group at a main chain thereof and a composition including the same, for forming an organic anti-reflective coating layer are disclosed. The polymer for forming an organic anti-reflective coating layer is represented by following Formula.  In Formula, R is hydrogen atom, C&#x2dc;Calkyl group, C&#x2dc;Calcohol group or epoxy group, Ris independently hydrogen atom, n is an integer of 1-50, Ris C&#x2dc;Calkyl group, C&#x2dc;Ccycloalkyl group, C&#x2dc;Caryl group or C&#x2dc;Carylalkyl group, Ris hydrogen atom, C&#x2dc;Calcohol group or epoxy group and POSS is a polyhedral oligosilsesquioxane.

Polymer for organic anti-reflective coating layer and composition including the same

An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1.  in Formula 1, R is C&#x2dc;Cmono-cyclic or multi-cyclic saturated hydrocarbon, Ris C&#x2dc;Clinear hydrocarbon, C&#x2dc;Cperfluoro compound or C&#x2dc;Caromatic compound, Rand Rare independently hydrogen atom or C&#x2dc;Csaturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).

Acid-amplifier having acetal group and photoresist composition including the same

A monomer for forming an organic anti-reflective coating layer, a polymer thereof and a composition including the same are disclosed. In a photolithography process, the organic anti-reflective coating layer absorbs an exposed light between a layer to be etched and a photoresist layer, and prevents a photoresist pattern from collapsing due to a standing wave generated under the photoresist layer. The polymer for forming an organic anti-reflective coating layer includes a repeating unit represented by Formula  wherein, Ris a hydrogen atom, a methyl group or an ethyl group, Ris a C&#x2dc;Calkylene group, a C&#x2dc;Ccycloalkylene group or a C&#x2dc;Caromatic hydrocarbon group, POSS is a polyhedral-oligomeric-silsesquioxane, and m is an integer of 2 to 110.

Growing community of inventors

Hwaseong-si, South Korea

Jeong-sik Kim