Samsung Electronics Co., Ltd.

Jeong-Seok Nam

Jong-Min Lee

Seung-Min Lee

Hoo-Sung Cho

Yong-Joon Choi

A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the rings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.

Vertical memory devices and methods of manufacturing the same

A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.

Growing community of inventors

Osan-si, South Korea

Jeong-Seok Nam