Lg Innotek Co., Ltd.

Hyundai Autron Company Ltd.

Jeong Mok Ha

Hyuk Woo

Young Joon Kim

Ju Hwan Lee

Jun Seo Lee

Tae Young Park

Seong-hwan Yun

Tae Youp Kim

Seon-hyeong Jo

Min Gi Kang

The power semiconductor device includes: a first trench gate and a second trench gate in a stripe shape extending in one direction in parallel and spaced apart from each other in a substrate; a third trench gate in a ladder shape extending in a direction different from the one direction between the first trench gate and the second trench gate in the substrate; a first conductive type body area each disposed between the first trench gate, the second trench gate and the third trench gate, respectively, in the substrate; a pair of first conductive type floating first areas surrounding each of bottom surfaces and at least one side of the first trench gate and the second trench gate in the substrate; and a first conductive type floating second area surrounding a bottom surface of the third trench gate in the substrate.

Power semiconductor device and manufacturing method thereof

A stereo matching apparatus is provided, where according to the stereo matching apparatus according to an exemplary embodiment of the present disclosure, a cost at nodes of a plurality of stages relative to an image of a current scan line is determined by which level among a same level, an upper level and a lower level of a previous stage a cost of same stage of an upper scan line is determined, and whether a cost of the same stage of the upper scan line is determined by other disparities.

Stereo matching apparatus using image property

Growing community of inventors

Seoul, South Korea

Jeong Mok Ha