Skhynix Inc.

Industry-University Cooperation Foundation Hanyang University

Jeong-Min Lee

Changhan Kim

Daehyun Kim

Woo-Hee Kim

Jinseon Lee

A deposition method may include: providing a structure to be deposited that includes a silicon oxide area and a silicon nitride area having different surface characteristics from each other; and performing an atomic layer deposition (ALD) process in a reactor provided with the structure to selectively form a silicon oxide layer on the silicon oxide portion between the silicon oxide portion and the silicon nitride portion. The ALD process may include: supplying a silicon precursor into the reactor to selectively adsorb the silicon precursor to a surface of the silicon oxide portion; purging the reactor; supplying an inhibitor material into the reactor to selectively adsorb the inhibitor material to a surface of the silicon nitride portion; purging the reactor; supplying an oxygen-containing source into the reactor; and purging the reactor.

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Ansan, South Korea

Jeong-Min Lee