Samsung Electronics Co., Ltd.

Jeong-kon Kim

Chung-Sam Jun

Sang-bong Choi

Sang-moon Chon

Sang-guen Oh

Jae-kwan Song

Sang-seon Lee

Kyoung-shin Park

Kyung-sung Bae

There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

Apparatus and method for contact failure inspection in semiconductor devices

A polishing method and apparatus for a semiconductor wafer includes a loading section having a loading platform for mounting a loading cassette, and a loading robot arm for transferring a wafer from the loading cassette. The apparatus includes a standby stage having a pre-polishing stand on which the wafer is placed, and a post-polishing stand for holding the wafer after polishing, and a polishing table on which a polishing process is performed. A wafer moving device transfers the wafer from the pre-polishing stand to the polishing table and back to the post-polishing stand. An unloading section includes an unloading platform for mounting an unloading cassette, and an unloading robot arm for transferring the wafer to the unloading cassette. A measurement device, proximal to the unloading stage, analyzes a polishing state of the wafer and then a cleaning device cleans the wafer after the wafers are analyzed.

Wafer polishing apparatus having measurement device and polishing method

A Faraday cup assembly of a semiconductor ion-implanting apparatus is installed adjacent to a disc upon which a wafer can be mounted for performing an ion implantation. A micro-discharge is prevented because the Faraday cup has an inner wall covered by a conductive thin film or has a discharge tag of a predetermined size embedded in its inner wall. An ion implanting process utilizing such an apparatus ensures that contamination and quality inferiority of the wafer are prevented by preventing the build up of an insulating layer of carbon impurities on the inner wall of the Faraday cup assembly.

Faraday cup assembly for a semiconductor ion-implanting apparatus

An advanced exposure apparatus combines a quadrupole illumination system and an annular illumination system, and includes a light source, an adjusting portion comprising a filter to limit the light emitted from the light source, a refractive/diffractive portion for refracting and diffracting the light emitted from the adjusting portion and a focussing portion for focussing the light emitted from the refractive/diffractive portion onto a wafer, wherein the filter is provided with first group holes and second group holes comprising four holes, respectively. In an exposure method using such an apparatus, uniform light intensity distribution can be formed on an image formation plane (or wafer) while improved resolution is maintained. Since image formation information (i.e, light passing through a mask pattern) becomes uniform, a very nearly circular contact hole pattern can be formed, to reduce the proximity effect.

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Suwon, South Korea

Jeong-kon Kim