Samsung Display Co., Ltd.

Jeong-Ju Park

Joo-han Kim

Joo Seok Yeom

Hyoung Cheol Lee

Hyuk Soon Kwon

Jee-Hun Lim

Tae-Kyung Yim

Jae-Hak Lee

Hwa-Dong Jung

Se-Myung Kwon

So-Young Koo

Wan-Soon Lim

Do-Hyun Kim

Xinxing Li

Jun-Hyun Park

Chan-Woo Yang

Xun Zhu

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.

Display substrate and method of manufacturing the same

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Seoul, South Korea

Jeong-Ju Park