Electronics and Telecommunications Research Institute

Jeong Jin Kim

Hae Cheon Kim

Hyung Sup Yoon

Jong-Won Lim

Dong Min Kang

Byoung-Gue Min

Sang-Heung Lee

Hokyun Ahn

Seong-Il Kim

Hong Gu Ji

Dong-Young Kim

Jongmin Lee

Hyung Seok Lee

Kyu Jun Cho

Jae Won Do

Sungjae Chang

Hyunwook Jung

Min Jeong Shin

Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same

Growing community of inventors

Jeonju-si, South Korea

Jeong Jin Kim