Samsung Electronics Co., Ltd.

Ls Cable Ltd.

Jeong-Ik Kim

Chul-Sung Kim

Sang-Woo Lee

Sang-Bom Kang

Dae-Yong Kim

Hyo-Seok Choi

Chung-Hwan Shin

Je-Hyung Ryu

Sang-Jin Hyun

Ja-hum Ku

Da-Il Eom

Heung-Nam Han

Jun-Ki Park

Sang-Gyum Kim

Il-Jo Kwak

A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

Semiconductor devices with shaped portions of elevated source/drain regions

A semiconductor device includes an active fin partially protruding from an isolation pattern on a substrate, a gate structure on the active fin, a source/drain layer on a portion of the active fin adjacent to the gate structure, a source/drain layer on a portion of the active fin adjacent to the gate structure, a metal silicide pattern on the source/drain layer, and a plug on the metal silicide pattern. The plug includes a second metal pattern, a metal nitride pattern contacting an upper surface of the metal silicide pattern and covering a bottom and a sidewall of the second metal pattern, and a first metal pattern on the metal silicide pattern, the first metal pattern covering an outer sidewall of the metal nitride pattern. A nitrogen concentration of the first metal pattern gradually decreases according to a distance from the outer sidewall of the metal nitride pattern.

Semiconductor device including contact plug and method of manufacturing the same

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

An electrical transmission line for transmitting electricity is made of a composite material in which aluminum and a plurality of carbon nanotubes are combined, and a weight ratio of the carbon nanotubes to the aluminum is 0.5 to 3 wt %. The carbon nanotubes are oriented at an angle within 30&#xb0; along a length direction of the electrical transmission line.

Electrical transmission line

Growing community of inventors

Seoul, South Korea

Jeong-Ik Kim