Samsung Electronics Co., Ltd.

Jeong-Hyun Choi

Sun-Yong Choi

Chung-Sam Jun

Kwang-Soo Kim

Tae-Kyoung Kim

Chung-sam Jun

Dong-Jin Park

Sung-Jun Lee

Thomas Byunghak Cho

Seung-Chul Lee

Dong-Chun Lee

Hyun-Won Mun

Jung-wook Heo

Il-Ku Nam

Byeong-Ha Park

Ho-Jung Ju

Koung-Su Shin

Jun-Hee Jung

Joo-Woo Kim

Young-Hwan Choo

Ji-Seon Paek

Jong-Dae Bae

A parallel output linear amplifier is provided that includes a transconductance amplifier configured to receive an analog input signal from an input terminal and amplify the analog input signal. The parallel output linear amplifier also includes a first pre-amplifier connected to the transconductance amplifier and operated using a floating drive voltage, and a cascode class AB amplifier connected to the first pre-amplifier and configured to provide an amplified signal to an output terminal. The parallel output linear amplifier further includes a second pre-amplifier configured connected to the transconductance amplifier and operated using the floating drive voltage, and a cascade class AB amplifier connected to the second pre-amplifier and configured to provide an amplified signal to the output terminal.

Parallel combined output linear amplifier and operating method thereof

A programmable variable gain amplifier includes at least three amplifiers. A first amplifier is configured to amplify an input signal. A second amplifier, which includes a programmable output load stage, is configured to receive an output signal from the first amplifier and to output a first differential output signal. The output load stage includes multiple first switches and multiple first diode-connected transistors that are open-circuited or short-circuited by the first switches. A third amplifier, which includes a programmable current mirror input stage, is configured to receive the first differential output signal from the second amplifier through the current mirror input stage and to output a second differential output signal. The current mirror input stage includes multiple second switches and multiple second transistors that are open-circuited or short-circuited by the plurality of second switches. The second transistors respectively form current mirrors with the first diode-connected transistors corresponding to the second transistors.

Programmable variable gain amplifier and RF receiver including the same

An automated and integrated substrate inspecting apparatus for performing an EBR/EEW inspection, a defect inspection of patterns and reticle error inspection of a substrate includes a first stage for supporting a substrate; a first image acquisition unit for acquiring a first image of a peripheral portion of the substrate supported by the first stage; a second stage for supporting the substrate; a second image acquisition unit for acquiring a second image of the substrate supported by the second stage; a transfer robot for transferring the substrate between the first stage and the second stage; and a data processing unit, connected to the first image acquisition unit and the second image acquisition unit, for inspecting results of an edge bead removal process and an edge exposure process performed on the substrate using the first image, and for inspecting for defects of patterns formed on the substrate using the second image.

Apparatus and method for inspecting a substrate

A method of measuring a concentration of dopants of an objective thin film includes measuring a concentration of dopants of a first wafer, forming the objective thin film on the first wafer to form a second wafer, measuring a concentration of dopants of the second wafer, and obtaining the concentration of dopants of the objective thin film by subtracting the concentration of dopants of the first wafer from the concentration of dopants of the second wafer. Therefore, the concentration of dopants of the objective thin film may be measured without the use of a criterion wafer, thereby reducing measuring time. Also, the concentration of dopants of the objective thin film may be easily controlled, and therefore promptly corrected if necessary.

Method of measuring and controlling concentration of dopants of a thin film

A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Method of measuring a concentration of a material and method of measuring a concentration of a dopant of a semiconductor device

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Yongin-si, South Korea

Jeong-Hyun Choi