Samsung Electronics Co., Ltd.

Jeong-Hyo Lee

Jung-Gun You

Ji-Yong Ha

Young-Joon Park

Myung-Yoon Um

Jun-sun Hwang

Hwa-Sung Rhee

Hyun-Jo Kim

Jong-Mil Youn

Jae-yup Chung

Se-wan Park

Hee-Don Jeong

Seong-Yul Park

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

Semiconductor devices having gate structures with skirt regions

A semiconductor device is provided as follows. Active fins protrude from a substrate, extending in a first direction. A first device isolation layer is disposed at a first side of the active fins. A second device isolation layer is disposed at a second side of the active fins. A top surface of the second device isolation layer is higher than a top surface of the first device isolation layer and the second side is opposite to the first side. A normal gate extends across the active fins in a second direction crossing the first direction. A first dummy gate extends across the active fins and the first device isolation layer in the second direction. A second dummy gate extends across the second device isolation layer in the second direction.

Semiconductor device having dummy gates and method of fabricating the same

A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Jeong-Hyo Lee