Samsung Sdi Co., Inc.

Cheil Industries Inc.

Jeong Hwan Jeong

Dong Hun Kang

Jong Il Noh

Chang Ki Hong

Tae Wan Kim

Young Nam Choi

Young Chul Jung

The present invention relates to a CMP slurry composition for polishing a copper line, the CMP slurry composition comprising a colloidal silica, an oxidizing agent, a complexing agent, a corrosion inhibitor, a pH regulator, and ultrapure water. The colloidal silica has a specific surface area (BET) of 72.9 to 88.5 m/g, and 0.1 to 2 wt % of the colloidal silica is included in the CMP slurry composition. The CMP slurry composition has an excellent copper line polishing rate, has a low number of defects and minimizes scratches after polishing, and can minimize dishing.

CMP slurry composition for polishing copper line and polishing method using same

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

CMP slurry composition for polishing copper and polishing method using the same

The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.

CMP slurry composition for polishing copper, and polishing method using same

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Uiwang-si, South Korea

Jeong Hwan Jeong