Samsung Electronics Co., Ltd.

Jeong-Hun Park

Hee-Sun Chae

Kyoung-Shin Park

Han-Byoul Jeon

Jong-Hee Yun

Dae-Wang Kim

Han-Sub Park

A post-exposure baking apparatus comprising a supporting member, a heating member, and a cooling member is disclosed. A wafer is disposed on the supporting member and a photoresist layer is formed on the wafer. The heating member comprises electrical heating wires and is adapted to apply heat to the wafer to chemically amplify an acid generated in the photoresist layer through an exposure process using deep ultraviolet light. The cooling member is adapted to cool an outer edge of the wafer to suppress the amplification of the acid at the outer edge of the wafer.

Post-exposure baking apparatus and related method

A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to form a plurality of storage node holes, where the plurality of storage node holes include at least one first storage node hole formed on an effective chip area and at least one second storage node hole formed on an edge chip area. First storage nodes and second storage nodes are formed in the first and second storage node holes, respectively. A photoresist pattern is formed on the wafer having the storage nodes. The photoresist pattern is preferably formed to expose the effective chip areas and to cover the edge chip areas. The molding layer is etched, using the photoresist pattern as an etching mask, to expose portions of the first storage nodes.

Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby

Growing community of inventors

Gyeonggi-do, South Korea

Jeong-Hun Park