Samsung Electronics Co., Ltd.

Jeong-ho Yoo

Jin-yeong Joe

Seung-hun Lee

Seok-hoon Kim

Geun-hee Jeong

Byeong-Chan Lee

Bon-Young Koo

Hyun-ho Noh

Yong-Kook Park

An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.

Integrated circuit devices and method of manufacturing the same

A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.

Semiconductor device and method for fabricating the same

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Seongnam-si, South Korea

Jeong-ho Yoo