Samsung Electronics Co., Ltd.

Chung Ang University Industry Academic Cooperation

Jeong-Ho Shin

Kong-soo Cheong

Jin-Won Jun

Yoon-Jong Yoo

Ki-Young Kim

Jong-hyon Ahn

Joon-Ki Paik

Dong-Gyun Kim

Sung-Gun Kang

Maik Vivek

Paik Joon-Ki

Jin-Young Youn

An apparatus and method for image interpolation based on low pass filtering are provided. The apparatus includes an edge direction detector detecting an edge direction for a pixel nearest to a to-be-interpolated pixel among pixels and determining the edge direction of the to-be-interpolated pixel as the detected edge direction, a pixel value calculator calculating pixel values of interpolation points located in a lattice filtering window having a predetermined size by using pixel values of pixels located adjacent to the interpolation points, and a filtering unit performing low pass filtering on the to-be-located pixel according to a low pass filter corresponding to the determined edge direction of the to-be-interpolated pixel, the low pass filter being one of low pass filters corresponding to predetermined vertical, horizontal, left diagonal and right diagonal directions respectively. Accordingly, a process of calculating the pixel value of the to-be-interpolated pixel can be simplified and a processing speed can be increased. Furthermore, it is possible to obtain a high-quality image without having image deterioration such as blocking effect caused by an error in a pixel value even for a region with an uneven edge.

Apparatus and method for image interpolation based on low pass filtering

Methods and apparatus are disclosed for digital image restoration. The method including the steps of receiving an external deteriorated image, and generating N restoration images by using a preset PSF and an image restoration filter without computing a PSF of the input deteriorated image, dividing the restoration images into window parts of a predetermined window size, computing absolute values of differences among peripheral pixels within the divided window parts, selecting only a high frequency part, and analyzing focus deterioration; determining weights of the N restoration images, selecting window parts having high weights, and integrating the selected window parts into one image and comparing a degree of restoration of the integrated image with a preset degree of restoration, and outputting the integrated image as a resultant image when the degree of restoration of the integrated image is higher than the preset degree of restoration.

Method and apparatus for multifocus digital image restoration using image integration technology

In a method of manufacturing a semiconductor device, a preliminary metal silicide layer is selectively formed on a substrate having a transistor, the transistor having source/drain regions. A capping layer having a thermal expansion coefficient greater than that of the preliminary metal silicide layer is formed on the substrate having the preliminary metal silicide layer. The substrate is thermally treated to form a metal silicide layer, and to apply a tensile stress caused by a thermal expansion coefficient difference between the metal silicide layer and the capping layer to the source/drain regions of the transistor.

Method of manufacturing semiconductor device

In a method of forming a metal gate in a semiconductor device, a gate insulation pattern and a dummy gate pattern are formed on a substrate. An insulation interlayer is formed on the dummy gate pattern to cover the dummy gate pattern. The insulation interlayer is polished such that a top surface of the dummy gate pattern is exposed, and the dummy gate pattern is selectively removed to form a trench on the substrate. A gate spacer is formed on an inner sidewall of the trench for determining a gate length of the metal gate. A metal is deposited to a sufficient thickness to fill the trench to form a metal layer. The metal layer is polished to remain in the trench. Accordingly, the gate length of the metal gate may be reduced no more than the resolution limit of the photolithography exposing system.

Method of forming a metal gate in a semiconductor device

Provided is a method of forming a thick metal silicide layer on a gate electrode. The method includes forming a gate electrode of a transistor on a semiconductor substrate, wherein a hard mask is formed on the gate electrode, forming a spacer on a sidewall of the gate electrode, forming a first silicide layer on a portion of the semiconductor substrate, adjacent to the spacer, forming an insulating layer on the first suicide layer to expose upper portions of the hard mask and the spacer, selectively etching the exposed upper portions of the hard mask and the spacer using the insulating layer as an etch mask until the top surface and the sidewall of the gate electrode are exposed, forming a metal layer on the exposed top surface and sidewall of the gate electrode, and forming a second silicide layer on the gate electrode by siliciding the metal layer.

Growing community of inventors

Seoul, South Korea

Jeong-Ho Shin