Samsung Electronics Co., Ltd.

Yonsei University

Jeong-ho Lee

Eun-chu Oh

Young-Sik Kim

Moo-sung Kim

Yong-jun Lee

Young-Jin Cho

Eun Chu Oh

Won Woo Ro

Won Hyun Jeon

Ho-jun Shim

Young-sik Kim

Young-Kwang Yoo

Young-geun Lee

Won Seob Jeong

Myung Kuk Yoon

Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.

Method of equalizing bit error rates of memory device

A memory controller configured to control a memory device including a plurality of banks. The memory controller may determine whether a number of write commands enqueued in a command queue of the memory controller exceeds a reference value, calculate a level of write power to be consumed by the memory device in response to at least some of the write commands from among the enqueued write commands when the number of enqueued write commands exceeds the reference value, and schedule, based on the calculated level of write power, interleaving commands executing an interleaving operation of the memory device, from among the enqueued write commands.

Memory controller and operating method thereof

Provided are a memory controller determining degradation in endurance, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes: an error correction code (ECC) circuit configured to detect an error from data read from a memory device; and an endurance determination circuit configured to check a first counting value indicating a number of writing operations on the memory device and a second counting value indicating, based on the data read from the memory device, at least one of: a number of first memory cells of the memory device, each of the first memory cells having an error and a number of second memory cells of the memory device in a certain logic state, and configured to perform a first determination operation for determining whether endurance of the memory device has degraded based on a checking result.

Memory controller determining endurance degradation, memory system including the same, and method of operating the memory controller

Provided is a removable storage system including: a data storage device configured to store a plurality of files including a first file and a second file; a host interface configured to receive, from a host, a pattern matching request including pattern information and file information regarding the plurality of files, and transmit, to the host, a result of pattern matching regarding the plurality of files; and a pattern matching accelerator configured to perform the pattern matching in response to the pattern matching request, wherein the pattern matching accelerator includes a scan engine configured to scan data based on a pattern, and a scheduler configured to control the scan engine to stop scanning the first file and start scanning the second file.

Storage system and operating method thereof

Growing community of inventors

Gwacheon-si, South Korea

Jeong-ho Lee