Seoul Viosys Co., Ltd.

Seoul Opto Device Co., Ltd.

Jeong Hee Yang

Kyoung Wan Kim

Yeo Jin Yoon

Keum Ju Lee

Jae Moo Kim

Ye Seul Kim

Won Cheol Seo

Kyu Ho Lee

Jin Cheol Shin

Jin Young Lee

Sum Geun Lee

Sang Hyun Oh

Duk Il Suh

Da Yeon Jeong

Soo Young Moon

Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.

Light emitting diode with improved light extraction efficiency

A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

Light emitting diode having electrode pads

Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.

Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

Light emitting diode with improved luminous efficiency

An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

Light emitting diode having electrode extensions for current spreading

The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension.

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Ansan-si, South Korea

Jeong Hee Yang